The dependence of the band gap (E G) and higher critical-point energies of dilute-nitrogen Ga 1-yIn yAs 1-xN x epilayers on nitrogen mole fraction (x) was investigated using photoreflectance spectroscopy. It was found that band gap decreases with increasing x in a highly nonlinear fashion. It was observed that as x increases, the bowing parameter become less negative. Results suggest that nitrogen-related impurity levels arise within the band gap of dilute-nitrogen GaInAsN alloys.
ASJC Scopus subject areas
- Physics and Astronomy(all)