Next-generation, high-efficiency III-V multijunction solar cells

R. R. King, N. H. Karam, J. H. Ermer, M. Haddad, P. Colter, T. Isshiki, H. Yoon, H. L. Cotal, D. E. Joslin, D. D. Krut, R. Sudharsanan, K. Edmondson, B. T. Cavicchi, D. R. Lillington

Research output: Chapter in Book/Report/Conference proceedingConference contribution

83 Scopus citations


Next-generation solar cell approaches such as AIGaInP/GaAs/GaInNAs/Ge 4-junction cells, lattice-mismatched GaInP/GaInAs/Ge, concentrator cells, and improved 3-junction device structures hold the promise of greater efficiency than even today's highly successful multijunction cells. Wide-bandgap tunnel junctions, improved heterointerfaces, and other device structure improvements have recently resulted in several record-efficiency GaInP/GaAs/Ge cell results. Triple-junction (3J) cells grown in this work have demonstrated 29.3% efficiency for space (AM0, 1 sun). Space concentrator 3J cells have efficiency up to 30.0% at low concentration (AM0, 7.6 suns), and terrestrial concentrator cells grown at Spectrolab and processed at NREL have reached 32.3% (AM1.5D, 440 suns).

Original languageEnglish (US)
Title of host publicationConference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)0780357728
StatePublished - Jan 1 2000
Externally publishedYes
Event28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States
Duration: Sep 15 2000Sep 22 2000

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Other28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Country/TerritoryUnited States

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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