New pathways to heteroepitaxial GaN by inorganic CVD synthesis and characterization of related Ga-C-N novel systems

John Kouvetakis, M. O'Keeffe, L. Brouseau, J. McMurran, D. Williams, David Smith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations


We describe the development of a new deposition method for thin oriented films of GaN on basal plane sapphire using an exclusively inorganic single-source precursor free of carbon and hydrogen, Cl 2GaN 3. The films have been characterized by Rutherford backscattering spectroscopy (RBS) and cross sectional transmission electron microscopy (TEM) for composition morphology and structure. RBS analysis confirmed stoichiometric GaN and TEM observations of the highly conformal films revealed heteroepitaxial columnar growth of crystalline wurtzite material on sapphire. Auger and RBS oxygen and carbon resonance profiles indicated that the films were pure and highly homogeneous. We also report the reactions of Cl 2GaN 3 with organometallic nitrides to yield a crystalline, novel gallium carbon nitride of composition GaC 3N 3. Quantitative X-ray powder diffraction has been used to refine the cubic structure of this material which consists of Ga atoms octahedrally surrounded by on the average three C and three N atoms. The structurally analogous LiGaC 4N 4 phase has also been prepared and characterized.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsF.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar
PublisherMaterials Research Society
Number of pages6
StatePublished - 1997
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996


OtherProceedings of the 1996 MRS Fall Symposium
CityBoston, MA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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