Negative differential resistance in a bilayer molecular junction

John D. Le; Yan He; Thomas R. Hoye; Curtis C. Mead; Richard A. Kiehl

doi:10.1063/1.1636520

Negative differential resistance in a bilayer molecular junction

John D. Le, Yan He, Thomas R. Hoye, Curtis C. Mead, Richard A. Kiehl

Research output: Contribution to journal › Article › peer-review

68 Scopus citations

Abstract

A negative differential resistance (NDR) in a bilayer molecular junction was analyzed. The junction was based on a Hg-alkanethiol//arenethiol-Au system consisting of two different self-assembled monolayers (SAM). Persistant reproducible NDR was observed in the current-voltage characteristics with peak-to-valley ratios as high as 4.5 at room temperature. The results suggests that a NDR mechanism for such SAMs can be accessed by tunnel injection through an alkanethiol SAM and bilayer junction provides a favorable electrical and mechanical environment for the mechanism.

Original language	English (US)
Pages (from-to)	5518-5520
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	26
DOIs	https://doi.org/10.1063/1.1636520
State	Published - Dec 29 2003
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1636520

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abstract = "A negative differential resistance (NDR) in a bilayer molecular junction was analyzed. The junction was based on a Hg-alkanethiol//arenethiol-Au system consisting of two different self-assembled monolayers (SAM). Persistant reproducible NDR was observed in the current-voltage characteristics with peak-to-valley ratios as high as 4.5 at room temperature. The results suggests that a NDR mechanism for such SAMs can be accessed by tunnel injection through an alkanethiol SAM and bilayer junction provides a favorable electrical and mechanical environment for the mechanism.",

author = "Le, {John D.} and Yan He and Hoye, {Thomas R.} and Mead, {Curtis C.} and Kiehl, {Richard A.}",

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T1 - Negative differential resistance in a bilayer molecular junction

AU - Le, John D.

AU - He, Yan

AU - Hoye, Thomas R.

AU - Mead, Curtis C.

AU - Kiehl, Richard A.

PY - 2003/12/29

Y1 - 2003/12/29

N2 - A negative differential resistance (NDR) in a bilayer molecular junction was analyzed. The junction was based on a Hg-alkanethiol//arenethiol-Au system consisting of two different self-assembled monolayers (SAM). Persistant reproducible NDR was observed in the current-voltage characteristics with peak-to-valley ratios as high as 4.5 at room temperature. The results suggests that a NDR mechanism for such SAMs can be accessed by tunnel injection through an alkanethiol SAM and bilayer junction provides a favorable electrical and mechanical environment for the mechanism.

AB - A negative differential resistance (NDR) in a bilayer molecular junction was analyzed. The junction was based on a Hg-alkanethiol//arenethiol-Au system consisting of two different self-assembled monolayers (SAM). Persistant reproducible NDR was observed in the current-voltage characteristics with peak-to-valley ratios as high as 4.5 at room temperature. The results suggests that a NDR mechanism for such SAMs can be accessed by tunnel injection through an alkanethiol SAM and bilayer junction provides a favorable electrical and mechanical environment for the mechanism.

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DO - 10.1063/1.1636520

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Negative differential resistance in a bilayer molecular junction

Abstract

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