Negative differential conductance in a lateral hot-electron device

J. C. Wu, M. N. Wybourne, C. Berven, S. M. Goodnick, D. D. Smith

Research output: Contribution to journalArticlepeer-review


We report on the observations of S-type negative differential conductance in the current-voltage characteristics of a pinched cavity quantum dot structure. An energy balance approach is used to explain the existence of bistable current-voltage characteristics due to thermal runaway of the hot carriers in the dot structure. This runaway is shown to arise from heating of carriers in the quantum dot by incident electrons injected over the barrier of the input constriction. The observed S-type negative differential conductance is controlled by a third-terminal gate bias, and may be turned on or off depending on the bias voltage. Thus the effect may be utilized to realize a multiterminal switching device.

Original languageEnglish (US)
Article number140
Pages (from-to)922-925
Number of pages4
JournalSemiconductor Science and Technology
Issue number5 S
StatePublished - Dec 1 1994
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'Negative differential conductance in a lateral hot-electron device'. Together they form a unique fingerprint.

Cite this