Near-field investigation of spatial variations of (202̄1̄) InGaN quantum well emission spectra

S. Marcinkevičius, Y. Zhao, K. M. Kelchner, S. Nakamura, S. P. Denbaars, J. S. Speck

Research output: Contribution to journalArticlepeer-review

24 Scopus citations


Scanning near-field optical spectroscopy was applied to semipolar (20 2 ̄ 1 ̄) InGaN/GaN quantum wells (QWs) to evaluate spatial homogeneity of QW band gap and its dependence on the growth conditions. In the most uniform QW, photoluminescence (PL) spectra were found to be narrow with small peak wavelength and spectral width variations. A QW grown at reduced temperature showed sub-micrometer size PL features aligned along the a axis and caused by nonuniform In incorporation at surface undulations. At extended defects, complex and strongly varying near-field spectra were observed and tentatively assigned to QW segments of different orientations around these defects.

Original languageEnglish (US)
Article number131116
JournalApplied Physics Letters
Issue number13
StatePublished - Sep 23 2013
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Near-field investigation of spatial variations of (202̄1̄) InGaN quantum well emission spectra'. Together they form a unique fingerprint.

Cite this