Abstract
An accurate analysis of nanoscale compositional fluctuations in InGaAs/GaAs quantum wires grown by metalorganic chemical vapor deposition on V-grooved substrates was performed by means of high-spatial-resolution transmission electron microscopy techniques. Small In fluctuations (2%-3% excess indium), spatially localized over approximately 5 nm, were detected and related to changes in the photoluminescence and photoluminescence excitation spectra.
Original language | English (US) |
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Pages (from-to) | 2261-2264 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 87 |
Issue number | 5 |
DOIs | |
State | Published - Mar 2000 |
ASJC Scopus subject areas
- Physics and Astronomy(all)