Nanometer-scale composition measurements of Ge/Si(100) islands

Margaret Floyd, Yangting Zhang, K. P. Driver, Jeffery Drucker, Peter Crozier, David Smith

Research output: Contribution to journalArticlepeer-review

76 Scopus citations


Nanometer-scale composition of Ge/Si(100) islands grown by molecular-beam epitaxy was measured by electron energy-loss spectroscopy (EELS). When the growth temperature was increased from 400 to 700°C, the Ge concentration XGe decreased and the Ge/Si interface became more diffuse. Atomic force microscopy results showed that integrated island volumes increased linearly with Ge coverage θGe, with slopes greater than 1.

Original languageEnglish (US)
Pages (from-to)1473-1475
Number of pages3
JournalApplied Physics Letters
Issue number9
StatePublished - Mar 3 2003

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Nanometer-scale composition measurements of Ge/Si(100) islands'. Together they form a unique fingerprint.

Cite this