Multiscale Modeling of Total Ionizing Dose Effects in Commercial-off-the-Shelf Parts in Bipolar Technologies

A. Privat, Hugh Barnaby, P. C. Adell, B. S. Tolleson, Y. Wang, X. Han, P. Davis, B. R. Rax, T. E. Buchheit

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


A multiscale modeling platform that supports the 'virtual' qualification of commercial-off-the-shelf parts is presented. The multiscale approach is divided into two modules. The first module generates information related to the bipolar junction transistor gain degradation that is a function of fabrication process, operational, and environmental inputs. The second uses this information as inputs for radiation-enabled circuit simulations. The prototype platform described in this paper estimates the total ionizing dose and dose rate responses of linear bipolar integrated circuits for different families of components. The simulation and experimental results show good correlation and suggest this platform to be a complementary tool within the radiation-hardness assurance flow. The platform may reduce some of the costly reliance on testing for all systems.

Original languageEnglish (US)
Article number8579161
Pages (from-to)190-198
Number of pages9
JournalIEEE Transactions on Nuclear Science
Issue number1
StatePublished - Jan 2019


  • Bipolar transistor
  • commercial-off-the-shelf (COTS)
  • enhanced low-dose rate sensitivity (ELDRS)
  • modeling
  • n-p-n
  • p-n-p
  • qualification
  • total ionizing dose (TID)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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