Abstract
In this paper, a multilayer ReS2 p-n homojunction is fabricated on an oxidized Si substrate, and its photoemission under a forward bias and its photodetection under a reverse bias are reported for the first time. Au nanoparticles were used to make lateral p-n homojunctions. The device shows room temperature photoemission in the IR range, and in the photodetector mode, it shows a 0.41A/W responsivity under illumination by a 660nm red laser.
Original language | English (US) |
---|---|
Article number | 055201 |
Journal | Applied Physics Express |
Volume | 9 |
Issue number | 5 |
DOIs | |
State | Published - May 2016 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)