MOVPE growth of GaN on Si(1 1 1) substrates

Armin Dadgar, M. Poschenrieder, J. Bläsing, O. Contreras, F. Bertram, T. Riemann, A. Reiher, M. Kunze, I. Daumiller, A. Krtschil, A. Diez, A. Kaluza, A. Modlich, M. Kamp, J. Christen, Fernando Ponce, E. Kohn, A. Krost

Research output: Contribution to journalConference articlepeer-review

137 Scopus citations


Metalorganic chemical vapor phase deposition of thick, crack-free GaN on Si can be performed either by patterning of the substrate and selective growth or by low-temperature (LT) AlN interlayers enabling very thick GaN layers. A reduction in dislocation density from 1010 to 109 cm-2 is observed for LT-AlN interlayers which can be further improved using monolayer thick SixNy in situ masking and subsequent lateral overgrowth. Crack-free AlGaN/GaN transistor structures show high room temperature mobilities of 1590 cm2/Vs at 6.7 × 1012cm-2 sheet carrier concentration. Thick crack-free light emitters have a maximum output power of 0.42 mW at 498 nm and 20 mA.

Original languageEnglish (US)
Pages (from-to)556-562
Number of pages7
JournalJournal of Crystal Growth
Issue numberSUPPL.
StatePublished - Feb 2003
EventProceedings of the eleventh international conference on MOVPE XI - Berlin, Germany
Duration: Jun 3 2002Jun 7 2002


  • A1. Si(1 1 1) substrates
  • A3. Metalorganic vapor phase epitaxy
  • B1. GaN

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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