MOS gated Si:SiGe quantum wells formed by anodic oxidation

J. C. Yeoh; P. W. Green; Trevor Thornton; S. Kaya; K. Fobelets; J. M. Fernández

doi:10.1088/0268-1242/13/12/020

MOS gated Si:SiGe quantum wells formed by anodic oxidation

J. C. Yeoh, P. W. Green, Trevor Thornton, S. Kaya, K. Fobelets, J. M. Fernández

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We have used electrochemical anodic oxidation to form gate oxides on strained n-channel Si:SiGe quantum wells. The oxides are characterized by current-voltage and capacitance-voltage measurements. Comparison of measured and calculated electron sheet densities in the quantum well, indicates that the oxide growth does not cause degradation of the Si:SiGe material. This is confirmed by low-temperature measurements of the electron mobility and sheet density in the quantum well.

Original language	English (US)
Pages (from-to)	1442-1445
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	13
Issue number	12
DOIs	https://doi.org/10.1088/0268-1242/13/12/020
State	Published - Dec 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/13/12/020

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title = "MOS gated Si:SiGe quantum wells formed by anodic oxidation",

abstract = "We have used electrochemical anodic oxidation to form gate oxides on strained n-channel Si:SiGe quantum wells. The oxides are characterized by current-voltage and capacitance-voltage measurements. Comparison of measured and calculated electron sheet densities in the quantum well, indicates that the oxide growth does not cause degradation of the Si:SiGe material. This is confirmed by low-temperature measurements of the electron mobility and sheet density in the quantum well.",

author = "Yeoh, {J. C.} and Green, {P. W.} and Trevor Thornton and S. Kaya and K. Fobelets and Fern{\'a}ndez, {J. M.}",

year = "1998",

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TY - JOUR

T1 - MOS gated Si:SiGe quantum wells formed by anodic oxidation

AU - Yeoh, J. C.

AU - Green, P. W.

AU - Thornton, Trevor

AU - Kaya, S.

AU - Fobelets, K.

AU - Fernández, J. M.

PY - 1998/12

Y1 - 1998/12

N2 - We have used electrochemical anodic oxidation to form gate oxides on strained n-channel Si:SiGe quantum wells. The oxides are characterized by current-voltage and capacitance-voltage measurements. Comparison of measured and calculated electron sheet densities in the quantum well, indicates that the oxide growth does not cause degradation of the Si:SiGe material. This is confirmed by low-temperature measurements of the electron mobility and sheet density in the quantum well.

AB - We have used electrochemical anodic oxidation to form gate oxides on strained n-channel Si:SiGe quantum wells. The oxides are characterized by current-voltage and capacitance-voltage measurements. Comparison of measured and calculated electron sheet densities in the quantum well, indicates that the oxide growth does not cause degradation of the Si:SiGe material. This is confirmed by low-temperature measurements of the electron mobility and sheet density in the quantum well.

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U2 - 10.1088/0268-1242/13/12/020

DO - 10.1088/0268-1242/13/12/020

M3 - Article

AN - SCOPUS:0032289639

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SP - 1442

EP - 1445

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 12

ER -

MOS gated Si:SiGe quantum wells formed by anodic oxidation

Abstract

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