MOS gated Si:SiGe quantum wells formed by anodic oxidation

J. C. Yeoh, P. W. Green, Trevor Thornton, S. Kaya, K. Fobelets, J. M. Fernández

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


We have used electrochemical anodic oxidation to form gate oxides on strained n-channel Si:SiGe quantum wells. The oxides are characterized by current-voltage and capacitance-voltage measurements. Comparison of measured and calculated electron sheet densities in the quantum well, indicates that the oxide growth does not cause degradation of the Si:SiGe material. This is confirmed by low-temperature measurements of the electron mobility and sheet density in the quantum well.

Original languageEnglish (US)
Pages (from-to)1442-1445
Number of pages4
JournalSemiconductor Science and Technology
Issue number12
StatePublished - Dec 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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