TY - GEN
T1 - Monte Carlo simulation of GaN diode including intercarrier interactions
AU - Ashok, A.
AU - Vasileska, Dragica
AU - Hartin, O.
AU - Goodnick, Stephen
PY - 2008
Y1 - 2008
N2 - Gallium Nitride (GaN) is becoming increasingly more attractive for a wide range of applications, such as optoelectronics, wireless communication, automotive and power electronics. Switching GaN diodes are becoming indispensable for power electronics due to their low on-resistance and capacity to withstand high voltages. A great deal of research has been done on GaN diodes over the decades but a major issue with previous studies is the lack of explicit inclusion of electron-electron interaction, which can be quite important for high carrier densities encountered. Here we consider this electron-electron interaction, within a non-parabolic band scheme, as the first attempt at including such effects when modeling nitride devices. Electron-electron scattering is treated using a real space molecular dynamics approach, which exactly models this interaction within a semi-classical framework. It results in strong carrier-carrier scattering on the biased contact of the resistor, where rapid carrier relaxation occurs.
AB - Gallium Nitride (GaN) is becoming increasingly more attractive for a wide range of applications, such as optoelectronics, wireless communication, automotive and power electronics. Switching GaN diodes are becoming indispensable for power electronics due to their low on-resistance and capacity to withstand high voltages. A great deal of research has been done on GaN diodes over the decades but a major issue with previous studies is the lack of explicit inclusion of electron-electron interaction, which can be quite important for high carrier densities encountered. Here we consider this electron-electron interaction, within a non-parabolic band scheme, as the first attempt at including such effects when modeling nitride devices. Electron-electron scattering is treated using a real space molecular dynamics approach, which exactly models this interaction within a semi-classical framework. It results in strong carrier-carrier scattering on the biased contact of the resistor, where rapid carrier relaxation occurs.
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U2 - 10.1007/978-3-540-78827-0_13
DO - 10.1007/978-3-540-78827-0_13
M3 - Conference contribution
AN - SCOPUS:70350300687
SN - 3540788255
SN - 9783540788256
T3 - Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
SP - 131
EP - 138
BT - Large-Scale Scientific Computing - 6th International Conference, LSSC 2007, Revised Papers
T2 - 6th International Conference on Large-Scale Scientific Computing, LSSC 2007
Y2 - 5 June 2007 through 9 June 2007
ER -