Monte carlo investigation of carrier-carrier interaction and ultrafast cooling of hot photoexcited carriers in GaAs

M. A. Osman; H. L. Grubin; J. P. Kreskovsky; D. K. Ferry

doi:10.1117/12.940868

Monte carlo investigation of carrier-carrier interaction and ultrafast cooling of hot photoexcited carriers in GaAs

M. A. Osman, H. L. Grubin, J. P. Kreskovsky, D. K. Ferry

Research output: Contribution to journal › Article › peer-review

Abstract

The role of the electron-electron (e-e), hole-hole (h-h), and electron-hole (e-h) interaction on ultrafast cooling of carriers in GaAs is examined for excess excitation energies of 40, 200, and 300 meV using an Ensemble Monte Carlo (EMC) approach. It is found that when the initial energy of the carrier is below the phonon emission threshold carrier-carrier (c-c) interactions stimulate either the optical phonon emission or absorption process depending on whether the initial energy of the carrier is above or below the thermal energy, respectively. The e-h interaction role is strong when excitation energy is below the LO phonon emission threshold.

Original language	English (US)
Pages (from-to)	94-101
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	793
DOIs	https://doi.org/10.1117/12.940868
State	Published - Aug 3 1987

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.940868

Cite this

@article{55f5200bfa0b44a2b4120727bc4eafa4,

title = "Monte carlo investigation of carrier-carrier interaction and ultrafast cooling of hot photoexcited carriers in GaAs",

abstract = "The role of the electron-electron (e-e), hole-hole (h-h), and electron-hole (e-h) interaction on ultrafast cooling of carriers in GaAs is examined for excess excitation energies of 40, 200, and 300 meV using an Ensemble Monte Carlo (EMC) approach. It is found that when the initial energy of the carrier is below the phonon emission threshold carrier-carrier (c-c) interactions stimulate either the optical phonon emission or absorption process depending on whether the initial energy of the carrier is above or below the thermal energy, respectively. The e-h interaction role is strong when excitation energy is below the LO phonon emission threshold.",

author = "Osman, {M. A.} and Grubin, {H. L.} and Kreskovsky, {J. P.} and Ferry, {D. K.}",

note = "Funding Information: This work was supported by the Office of Naval Research.",

year = "1987",

month = aug,

day = "3",

doi = "10.1117/12.940868",

language = "English (US)",

volume = "793",

pages = "94--101",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

}

TY - JOUR

T1 - Monte carlo investigation of carrier-carrier interaction and ultrafast cooling of hot photoexcited carriers in GaAs

AU - Osman, M. A.

AU - Grubin, H. L.

AU - Kreskovsky, J. P.

AU - Ferry, D. K.

N1 - Funding Information: This work was supported by the Office of Naval Research.

PY - 1987/8/3

Y1 - 1987/8/3

N2 - The role of the electron-electron (e-e), hole-hole (h-h), and electron-hole (e-h) interaction on ultrafast cooling of carriers in GaAs is examined for excess excitation energies of 40, 200, and 300 meV using an Ensemble Monte Carlo (EMC) approach. It is found that when the initial energy of the carrier is below the phonon emission threshold carrier-carrier (c-c) interactions stimulate either the optical phonon emission or absorption process depending on whether the initial energy of the carrier is above or below the thermal energy, respectively. The e-h interaction role is strong when excitation energy is below the LO phonon emission threshold.

AB - The role of the electron-electron (e-e), hole-hole (h-h), and electron-hole (e-h) interaction on ultrafast cooling of carriers in GaAs is examined for excess excitation energies of 40, 200, and 300 meV using an Ensemble Monte Carlo (EMC) approach. It is found that when the initial energy of the carrier is below the phonon emission threshold carrier-carrier (c-c) interactions stimulate either the optical phonon emission or absorption process depending on whether the initial energy of the carrier is above or below the thermal energy, respectively. The e-h interaction role is strong when excitation energy is below the LO phonon emission threshold.

UR - http://www.scopus.com/inward/record.url?scp=84958489477&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84958489477&partnerID=8YFLogxK

U2 - 10.1117/12.940868

DO - 10.1117/12.940868

M3 - Article

AN - SCOPUS:84958489477

SN - 0277-786X

VL - 793

SP - 94

EP - 101

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Monte carlo investigation of carrier-carrier interaction and ultrafast cooling of hot photoexcited carriers in GaAs

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this