Abstract
Monolayer passivation of the silicon(0 0 1) surface by selenium is investigated in an ultrahigh vacuum environment with a solid selenium source by reflection high-energy electron diffraction and residual gas analysis. It is found that precisely one monolayer of selenium is deposited on silicon(0 0 1) when the silicon substrate temperature is set slightly above the selenium source temperature and the passivation time ensures a little overdose of selenium above one monolayer. The temperature settings prevent selenium condensation on silicon(0 0 1), which makes selenium deposition on silicon(0 0 1) a thermodynamically self-limited process to exactly one monolayer.
Original language | English (US) |
---|---|
Pages (from-to) | 4578-4580 |
Number of pages | 3 |
Journal | Applied Surface Science |
Volume | 253 |
Issue number | 10 |
DOIs | |
State | Published - Mar 15 2007 |
Externally published | Yes |
Keywords
- Monolayer
- Selenium
- Silicon(0 0 1) surface
- Surface passivation
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Surfaces and Interfaces