@inproceedings{bfce6c12c13e4c3ab8e420f9ce26bcb8,
title = "Monocrystalline CdTe/MgCdTe double-heterostructure solar cells with a ZnTe hole-contact and passivation layer",
abstract = "Monocrystalline p-ZnTe/i-MgCdTe/n-CdTe/n-MgCdTe double-heterostructure (DH) solar cells are grown through a combination of MBE and MOCVD deposition techniques using several different dopants. The adverse effects (high interface recombination velocity) of the lattice mismatched ZnTe/CdTe hetero-interface is suppressed by the use of a DH with an intrinsic MgCdTe top barrier layer that functions as a passivation layer. The steady-state photoluminescence intensity is used to compare the potential device performance with previous ZnTe/CdTe and a-Si/i-MgCdTe/CdTe device structures while quantum efficiency measurements demonstrate the benefit of using ZnTe over previously demonstrated contact layers.",
keywords = "CdTe, Double-heterostructure, Monocrystalline, Photovoltaics (PV), ZnTe",
author = "Becker, {Jacob J.} and Campbell, {Calli M.} and Yuan Zhao and Mathieu Boccard and Dibyajvoti Mohanty and Ernesto Suarez and Maxwell Lassise and Ishwara Bhat and Zhang, {Yong Hang}",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",
year = "2017",
doi = "10.1109/PVSC.2017.8366296",
language = "English (US)",
series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1303--1307",
booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
}