@article{c94010f8c90442d7b88316d3eb21a0c9,
title = "Monocrystalline 1.7-eV-Bandgap MgCdTe Solar Cell with 11.2% Efficiency",
abstract = "This work demonstrates a monocrystalline 1.7 eV Mg0.13Cd0.87Te solar cell with an open-circuit voltage of 1.176 V and an active-area efficiency of 11.2%. The absorber layer is clad in wider bandgap passivation layers that effectively confine electrons and holes via the resulting band offsets. The potential barriers cladding the absorber are generated using higher magnesium compositions than the absorber and provide excellent carrier confinement. This ultimately leads to long minority carrier lifetimes (>500 ns) and high photoluminescence quantum efficiencies yielding an implied open-circuit voltage of 1.3 V. However, the same barriers at the heterointerfaces reduce fill factor by impeding transport; this is apparent as series resistance losses that can be overcome with operation at higher temperatures. The photocurrent loss mechanisms are simulated and analyzed, laying out the pathway for further improvements in current generation and, thus, efficiency.",
keywords = "CdTe, MgCdTe, double heterostructure (DH), monocrystalline, photovoltaics (PV), tandem1",
author = "Becker, {Jacob J.} and Campbell, {Calli M.} and Tsai, {Cheng Ying} and Yuan Zhao and Maxwell Lassise and Zhao, {Xin Hao} and Mathieu Boccard and Zachary Holman and Yong-Hang Zhang",
note = "Funding Information: Manuscript received April 13, 2017; revised June 8, 2017 and August 26, 2017; accepted October 24, 2017. Date of publication January 9, 2018; date of current version February 16, 2018. This work was supported in part by the Department of Energy through the Bay Area Photovoltaic Consortium (BAPVC) and Energy Efficiency and Renewable Energy programs under award number DE-EE0004946, in part by the National Science Foundation and the Department of Energy under NSF CA No. EEC-1041895 and DE-FOA-0001387, and in part by the U.S. Department of Energy, Energy Efficiency and Renewable Energy Program, under Award Number DE-EE0007552. (Corresponding author: Jacob J. Becker.) J. J. Becker, C.-Y. Tsai, Y. Zhao, M. Lassise, M. Boccard, Z. C. Holman, and Y.-H. Zhang are with the Center for Photonics Innovation and the School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287 USA (e-mail: jjbecker@asu.edu; cheng-ying.tsai@ asu.edu; yuan.Zhao.2@asu.edu; mlassise@asu.edu; mathieu.boccard@ gmail.com; zachary.holman@asu.edu; yhzhang@asu.edu). Publisher Copyright: {\textcopyright} 2018 IEEE.",
year = "2018",
month = mar,
doi = "10.1109/JPHOTOV.2017.2769105",
language = "English (US)",
volume = "8",
pages = "581--586",
journal = "IEEE Journal of Photovoltaics",
issn = "2156-3381",
publisher = "IEEE Electron Devices Society",
number = "2",
}