Momentum conservation in the luminescence of modulation-doped Ga x In1-x As-Al y In1-y As quantum wells

R. Rinaldi; R. Cingolani; M. Ferrara; Y. H. Zhang; K. Ploog

doi:10.1007/BF02482402

Momentum conservation in the luminescence of modulation-doped Ga_x In_1-x As-Al_y In_1-y As quantum wells

R. Rinaldi, R. Cingolani, M. Ferrara, Y. H. Zhang, K. Ploog

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The k-conserving selection rule in the electron-hole recombination is investigated by intensity-dependent photoluminescence measurements in n-type modulation-doped Ga_x In_1-x As-Al_y In_1-y As single quantum wells intentionally doped with Be acceptors in the well centre. The k-non-conserving recombination process involves electrons with momentum up to the Fermi edge and holes localized on the Be acceptors. The transition from a one-component electron plasma to a two-component electron-hole plasma is studied by comparing the experimental results with theoretical line shape models. The density-dependent band gap renormalization is determined for the one-component and the two-component electron-hole plasma. The obtained results are found to agree well with recent theoretical calculations.

Original language	English (US)
Pages (from-to)	675-687
Number of pages	13
Journal	Il Nuovo Cimento D
Volume	15
Issue number	4
DOIs	https://doi.org/10.1007/BF02482402
State	Published - Apr 1993
Externally published	Yes

Keywords

Optical properties of thin films surfaces, and thin layer structures (including superlattices, heterostructures, and intercalation compounds)
Other luminescence and radiative recombination

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1007/BF02482402

Cite this

@article{cd2b61480b284a19ac8023daf1e28bcc,

title = "Momentum conservation in the luminescence of modulation-doped Ga x In1-x As-Al y In1-y As quantum wells",

abstract = "The k-conserving selection rule in the electron-hole recombination is investigated by intensity-dependent photoluminescence measurements in n-type modulation-doped Ga x In1-x As-Al y In1-y As single quantum wells intentionally doped with Be acceptors in the well centre. The k-non-conserving recombination process involves electrons with momentum up to the Fermi edge and holes localized on the Be acceptors. The transition from a one-component electron plasma to a two-component electron-hole plasma is studied by comparing the experimental results with theoretical line shape models. The density-dependent band gap renormalization is determined for the one-component and the two-component electron-hole plasma. The obtained results are found to agree well with recent theoretical calculations.",

keywords = "Optical properties of thin films surfaces, and thin layer structures (including superlattices, heterostructures, and intercalation compounds), Other luminescence and radiative recombination",

author = "R. Rinaldi and R. Cingolani and M. Ferrara and Zhang, {Y. H.} and K. Ploog",

year = "1993",

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language = "English (US)",

volume = "15",

pages = "675--687",

journal = "Il Nuovo Cimento D",

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TY - JOUR

T1 - Momentum conservation in the luminescence of modulation-doped Ga x In1-x As-Al y In1-y As quantum wells

AU - Rinaldi, R.

AU - Cingolani, R.

AU - Ferrara, M.

AU - Zhang, Y. H.

AU - Ploog, K.

PY - 1993/4

Y1 - 1993/4

N2 - The k-conserving selection rule in the electron-hole recombination is investigated by intensity-dependent photoluminescence measurements in n-type modulation-doped Ga x In1-x As-Al y In1-y As single quantum wells intentionally doped with Be acceptors in the well centre. The k-non-conserving recombination process involves electrons with momentum up to the Fermi edge and holes localized on the Be acceptors. The transition from a one-component electron plasma to a two-component electron-hole plasma is studied by comparing the experimental results with theoretical line shape models. The density-dependent band gap renormalization is determined for the one-component and the two-component electron-hole plasma. The obtained results are found to agree well with recent theoretical calculations.

AB - The k-conserving selection rule in the electron-hole recombination is investigated by intensity-dependent photoluminescence measurements in n-type modulation-doped Ga x In1-x As-Al y In1-y As single quantum wells intentionally doped with Be acceptors in the well centre. The k-non-conserving recombination process involves electrons with momentum up to the Fermi edge and holes localized on the Be acceptors. The transition from a one-component electron plasma to a two-component electron-hole plasma is studied by comparing the experimental results with theoretical line shape models. The density-dependent band gap renormalization is determined for the one-component and the two-component electron-hole plasma. The obtained results are found to agree well with recent theoretical calculations.

KW - Optical properties of thin films surfaces, and thin layer structures (including superlattices, heterostructures, and intercalation compounds)

KW - Other luminescence and radiative recombination

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U2 - 10.1007/BF02482402

DO - 10.1007/BF02482402

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