TY - JOUR
T1 - Molecular-dynamics study of single-electron charging in semiconductor wires
AU - Yano, Kazuo
AU - Ferry, David K.
PY - 1992
Y1 - 1992
N2 - A molecular-dynamics technique is applied to single-electron charging effects in semiconductor wires, and the impact of strong electron-electron correlation on the conductance is investigated. Because of the relatively low electron density in semiconductors compared to a metal, the screening length is comparable to the sample size, which requires a treatment beyond the conventional Coulomb-blockade argument using macroscopic capacitance. Based on the molecular-dynamics method, most features of the periodic conductance oscillation in the double-barrier system are reproduced, and the feasibility of this technique in single-electron charging phenomena is demonstrated. Experimental observation of an activation energy smaller than the threshold energy of the nonlinear conductance, which the normal Coulomb-blockade model cannot explain, is reproduced in the present approach. This effect is due to the strong microscopic correlation, so that this is essential to describe accurately the single-electron charging effects in semiconductor systems.
AB - A molecular-dynamics technique is applied to single-electron charging effects in semiconductor wires, and the impact of strong electron-electron correlation on the conductance is investigated. Because of the relatively low electron density in semiconductors compared to a metal, the screening length is comparable to the sample size, which requires a treatment beyond the conventional Coulomb-blockade argument using macroscopic capacitance. Based on the molecular-dynamics method, most features of the periodic conductance oscillation in the double-barrier system are reproduced, and the feasibility of this technique in single-electron charging phenomena is demonstrated. Experimental observation of an activation energy smaller than the threshold energy of the nonlinear conductance, which the normal Coulomb-blockade model cannot explain, is reproduced in the present approach. This effect is due to the strong microscopic correlation, so that this is essential to describe accurately the single-electron charging effects in semiconductor systems.
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U2 - 10.1103/PhysRevB.46.3865
DO - 10.1103/PhysRevB.46.3865
M3 - Article
AN - SCOPUS:0344317349
SN - 0163-1829
VL - 46
SP - 3865
EP - 3871
JO - Physical Review B
JF - Physical Review B
IS - 7
ER -