TY - GEN
T1 - Modelling Cross-section Current Collection in Cu-Doped CdTe using PyCDTS
AU - Kumar, Niranjana Mohan
AU - Walker, Trumann
AU - Nietzold, Tara
AU - Stuckelberger, Michael
AU - Colegrove, Eric
AU - Lai, Barry
AU - Shaik, Abdul R.
AU - Bertoni, Mariana
N1 - Funding Information:
This material is based on the work supported by the Department of Energy under contracts DE-EE-0008163 and DE-EE-0008754.
Publisher Copyright:
© 2021 IEEE.
PY - 2021/6/20
Y1 - 2021/6/20
N2 - Copper is a traditional dopant for many types of polycrystalline thin-film CdTe photovoltaic devices. However, Cu can easily distribute through the depth and breadth of the device, segregating at interfaces or grain boundaries and leading to metastability of the device. Directly correlating Cu-related defect species to the local (i.e. nanoscale) charge transport in CdTe devices remains challenging due to relatively low Cu concentrations in the CdTe layer. Using nanoscale X-ray microscopy, we simultaneously probe both the elemental copper distribution and electrical performance of the device in cross-section. Complementary charge transport modelling delineates the possible defect distributions that can exist under low and high Cu loading, and how these defects interact with charge carriers at different depths of the device.
AB - Copper is a traditional dopant for many types of polycrystalline thin-film CdTe photovoltaic devices. However, Cu can easily distribute through the depth and breadth of the device, segregating at interfaces or grain boundaries and leading to metastability of the device. Directly correlating Cu-related defect species to the local (i.e. nanoscale) charge transport in CdTe devices remains challenging due to relatively low Cu concentrations in the CdTe layer. Using nanoscale X-ray microscopy, we simultaneously probe both the elemental copper distribution and electrical performance of the device in cross-section. Complementary charge transport modelling delineates the possible defect distributions that can exist under low and high Cu loading, and how these defects interact with charge carriers at different depths of the device.
KW - CdTe
KW - XBIC
KW - diffusion length
KW - modeling
KW - thin-film solar cells
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U2 - 10.1109/PVSC43889.2021.9518830
DO - 10.1109/PVSC43889.2021.9518830
M3 - Conference contribution
AN - SCOPUS:85115983433
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 2124
EP - 2127
BT - 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Y2 - 20 June 2021 through 25 June 2021
ER -