Modeling thermal effects in fully-depleted SOI devices with arbitrary crystallographic orientation

K. Raleva; Dragica Vasileska; Stephen Goodnick

doi:10.1007/978-3-642-18466-6_11

Modeling thermal effects in fully-depleted SOI devices with arbitrary crystallographic orientation

K. Raleva, Dragica Vasileska, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this work we continue our investigation on the heating effects in nano-scale FD-SOI devices using an in-house thermal particle-based device simulator. We focus on the current variations for FD-SOI devices with arbitrary crystallographic orientation and examine which crystallographic orientation gives better results from electrical and thermal point of view. Our simulation results demonstrate that one can obtain the lowest current degradation with (110) wafer orientation. The temperature of the hot-spot is the smallest for (110)-orientation as well.

Original language	English (US)
Title of host publication	Numerical Methods and Applications - 7th International Conference, NMA 2010, Revised Papers
Pages	103-109
Number of pages	7
DOIs	https://doi.org/10.1007/978-3-642-18466-6_11
State	Published - Mar 1 2011
Event	7th International Conference on Numerical Methods and Applications, NMA 2010 - Borovets, Bulgaria Duration: Aug 20 2010 → Aug 24 2010

Publication series

Name	Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
Volume	6046 LNCS
ISSN (Print)	0302-9743
ISSN (Electronic)	1611-3349

Other

Other	7th International Conference on Numerical Methods and Applications, NMA 2010
Country/Territory	Bulgaria
City	Borovets
Period	8/20/10 → 8/24/10

Keywords

crystallographic orientation
nano-scale FD-SOI devices
particle-based device simulations
self-heating effects

ASJC Scopus subject areas

Theoretical Computer Science
Computer Science(all)

Access to Document

10.1007/978-3-642-18466-6_11

Cite this

Raleva, K., Vasileska, D., & Goodnick, S. (2011). Modeling thermal effects in fully-depleted SOI devices with arbitrary crystallographic orientation. In Numerical Methods and Applications - 7th International Conference, NMA 2010, Revised Papers (pp. 103-109). (Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics); Vol. 6046 LNCS). https://doi.org/10.1007/978-3-642-18466-6_11

Modeling thermal effects in fully-depleted SOI devices with arbitrary crystallographic orientation. / Raleva, K.; Vasileska, Dragica ; Goodnick, Stephen.
Numerical Methods and Applications - 7th International Conference, NMA 2010, Revised Papers. 2011. p. 103-109 (Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics); Vol. 6046 LNCS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Raleva, K, Vasileska, D & Goodnick, S 2011, Modeling thermal effects in fully-depleted SOI devices with arbitrary crystallographic orientation. in Numerical Methods and Applications - 7th International Conference, NMA 2010, Revised Papers. Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics), vol. 6046 LNCS, pp. 103-109, 7th International Conference on Numerical Methods and Applications, NMA 2010, Borovets, Bulgaria, 8/20/10. https://doi.org/10.1007/978-3-642-18466-6_11

Raleva K, Vasileska D , Goodnick S. Modeling thermal effects in fully-depleted SOI devices with arbitrary crystallographic orientation. In Numerical Methods and Applications - 7th International Conference, NMA 2010, Revised Papers. 2011. p. 103-109. (Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)). doi: 10.1007/978-3-642-18466-6_11

Raleva, K. ; Vasileska, Dragica ; Goodnick, Stephen. / Modeling thermal effects in fully-depleted SOI devices with arbitrary crystallographic orientation. Numerical Methods and Applications - 7th International Conference, NMA 2010, Revised Papers. 2011. pp. 103-109 (Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)).

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Modeling thermal effects in fully-depleted SOI devices with arbitrary crystallographic orientation

Abstract

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Keywords

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