@inproceedings{48d08d5f64f24a32b88b6d7b9d9702c2,
title = "Modeling the effects of hydrogen on the mechanisms of dose rate sensitivity",
abstract = "The effects of hydrogen on dose-rate sensitivity are simulated using a one-dimensional (1-D) model that incorporates the physical mechanisms contributing to dose-rate effects in metal-oxide-semiconductor (MOS) structures. Calculations show that molecular hydrogen cracking at positively charged defects may be a key reaction relating hydrogen and dose rate response. Comparison to experimental data on bipolar devices results in good agreement with the dose rate calculations of interface trap buildup.",
keywords = "Dose rate, ELDRS, bipolar, hydrogen, interface traps, metal-oxide-semiconductor (MOS), silicon dioxide, total ionizing dose (TID)",
author = "Esqueda, {Ivan S.} and Hugh Barnaby and Adell, {Philippe C.}",
year = "2011",
month = dec,
day = "1",
doi = "10.1109/RADECS.2011.6131290",
language = "English (US)",
isbn = "9781457705878",
series = "Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS",
pages = "1--6",
booktitle = "RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings",
note = "12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011 ; Conference date: 19-09-2011 Through 23-09-2011",
}