Modeling of Quantum Effects in Ultrasmall HEMT Devices

Jing Rong Zhou, David K. Ferry

Research output: Contribution to journalArticlepeer-review

60 Scopus citations


Numerical Simulation of ultra-submicrometer high electron mobility transistors based upon a set of quantum moment equations is presented. These provide a first quantum description, based upon the moments of the Wigner distribution function. In HEMT's, the conduction electrons are confined in a narrow conduction channel and the short gate lengths (and small aspect ratio) create different potential barriers across the conduction channel than in a long-channel situation. In these small structures, quantum effects are expected to be prominent. A substantial change in the electron density distribution is found to occur due to the inclusion of these quantum corrections, and the total current in the simulated devices is increased by as much as 10% for a 24-nm gate-length device.

Original languageEnglish (US)
Pages (from-to)421-427
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number2
StatePublished - 1993

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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