TY - GEN
T1 - Modeling of InAs/GaSb tunnel junction
AU - Muralidharan, Pradyumna
AU - Vasileska, Dragica
AU - Allen, Charles
AU - Li, J. J.
AU - Zhang, Yong-Hang
PY - 2012
Y1 - 2012
N2 - We simulate a type III InAs/GaSb broken gap junction to evaluate its potential as a tunnel junction. The unique properties of broken gap will enhance current transport between the subcells of a multijunction solar cell and reduce the overall series resistance. A drift diffusion simulator has been developed to study the current characteristics of novel heterostructures. The effect all the major recombination mechanisms such as Shockley - Read - Hall, Radiative, and Auger on the current are included. Also, we investigate the effect of degeneracy on the device by considering the effect of band gap narrowing. In our model we also add effects of thermionic emission and band to band tunneling. As solar cells operate at low voltages we have added a model for low field mobility which might be a limiting factor.
AB - We simulate a type III InAs/GaSb broken gap junction to evaluate its potential as a tunnel junction. The unique properties of broken gap will enhance current transport between the subcells of a multijunction solar cell and reduce the overall series resistance. A drift diffusion simulator has been developed to study the current characteristics of novel heterostructures. The effect all the major recombination mechanisms such as Shockley - Read - Hall, Radiative, and Auger on the current are included. Also, we investigate the effect of degeneracy on the device by considering the effect of band gap narrowing. In our model we also add effects of thermionic emission and band to band tunneling. As solar cells operate at low voltages we have added a model for low field mobility which might be a limiting factor.
KW - Heterojunctions
KW - III - V semiconductor materials
KW - Numerical Modeling
KW - Tunneling
UR - http://www.scopus.com/inward/record.url?scp=84869409472&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84869409472&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2012.6318011
DO - 10.1109/PVSC.2012.6318011
M3 - Conference contribution
AN - SCOPUS:84869409472
SN - 9781467300643
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 2096
EP - 2100
BT - Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
T2 - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Y2 - 3 June 2012 through 8 June 2012
ER -