Here we use a coupled optical and electrical model to study the performance of heterojunction Si (HJSi) solar cells based on gallium phosphide (GaP)/crystalline Silicon (c-Si) structures in comparison with Si (c-Si)/amorphous Si (a-Si) HIT solar cells. The simulations are based on a numerical drift-diffusion model performed with the Sentaurus TCAD tool. We investigate the impact of highly n-doped indium tin oxide (ITO n+) window layer for the case of flat and textured surface with different ITO thicknesses. Simulation results indicates that GaP used in the top layer of a HJSi solar cell is a good candidate to improve the performance and reach efficiencies in excess of of the 25.6% currently reached for a HIT cells with a-Si. We perform a detailed simulation study of a fabricated solar cells structure for various emitter designs, extracting key figures of merit like efficiency, short-circuit current and open circuit voltage; our values are in good agreement with recently reported solar cells. After having validated our simulation approach, different optimization techniques are investigated in order to maximize the performance of the solar cell.

Original languageEnglish (US)
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages5
ISBN (Electronic)9781509056057
StatePublished - 2017
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: Jun 25 2017Jun 30 2017

Publication series

Name2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017


Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/TerritoryUnited States


  • GaP/c-Si heteostructures
  • Heterojunction
  • Photovoltaic cells
  • Silicon solar cells
  • Texturing

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials


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