Modeling inter-device leakage in 90 nm bulk CMOS devices

Ivan Sanchez Esqueda, Hugh Barnaby, Keith Holbert, Younes Boulghassoul

Research output: Contribution to journalArticlepeer-review

28 Scopus citations


We demonstrate an analytical modeling approach that captures the effects of total ionizing dose (TID) on the Id - Vgs characteristics of field-oxide-field-effect-transistors (FOXFETs) fabricated in a low-standby power commercial bulk CMOS technology. Radiation-enabled technology computer aided design (TCAD) simulations and experimental data allow validating the model against technological parameters such as doping concentration, field-oxide thickness, and geometry. When used in conjunction with the closed-form expressions for the surface potential, the analytical models for fixed oxide charge and interface trap density enables accurate modeling of radiation-induced degradation of the FOXFET Id - Vgs characteristics allowing the incorporation of TID into surface potential based compact models.

Original languageEnglish (US)
Article number5715907
Pages (from-to)793-799
Number of pages7
JournalIEEE Transactions on Nuclear Science
Issue number3 PART 2
StatePublished - Jun 2011


  • Analytical models
  • CMOS
  • field oxide field effect transistors (FOXFETs)
  • total ionizing dose (TID)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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