TY - JOUR
T1 - Modeling inter-device leakage in 90 nm bulk CMOS devices
AU - Sanchez Esqueda, Ivan
AU - Barnaby, Hugh
AU - Holbert, Keith
AU - Boulghassoul, Younes
N1 - Funding Information:
Manuscript received September 17, 2010; revised November 29, 2010; accepted December 09, 2010. Date of publication February 17, 2011; date of current version June 15, 2011. This work was supported by the AFOSR MURI program. I. S. Esqueda, H. J. Barnaby, and K. E. Holbert are with the School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287 USA (e-mail: ivans@asu.edu; hbarnaby@asu.edu; holbert@asu.edu). Y. Boulghassoul is with the Information Sciences Institute East, University of Southern California, Arlington, VA 22203 USA (e-mail: yboulgh@east.isi.edu). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TNS.2010.2101616
PY - 2011/6
Y1 - 2011/6
N2 - We demonstrate an analytical modeling approach that captures the effects of total ionizing dose (TID) on the Id - Vgs characteristics of field-oxide-field-effect-transistors (FOXFETs) fabricated in a low-standby power commercial bulk CMOS technology. Radiation-enabled technology computer aided design (TCAD) simulations and experimental data allow validating the model against technological parameters such as doping concentration, field-oxide thickness, and geometry. When used in conjunction with the closed-form expressions for the surface potential, the analytical models for fixed oxide charge and interface trap density enables accurate modeling of radiation-induced degradation of the FOXFET Id - Vgs characteristics allowing the incorporation of TID into surface potential based compact models.
AB - We demonstrate an analytical modeling approach that captures the effects of total ionizing dose (TID) on the Id - Vgs characteristics of field-oxide-field-effect-transistors (FOXFETs) fabricated in a low-standby power commercial bulk CMOS technology. Radiation-enabled technology computer aided design (TCAD) simulations and experimental data allow validating the model against technological parameters such as doping concentration, field-oxide thickness, and geometry. When used in conjunction with the closed-form expressions for the surface potential, the analytical models for fixed oxide charge and interface trap density enables accurate modeling of radiation-induced degradation of the FOXFET Id - Vgs characteristics allowing the incorporation of TID into surface potential based compact models.
KW - Analytical models
KW - CMOS
KW - field oxide field effect transistors (FOXFETs)
KW - total ionizing dose (TID)
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U2 - 10.1109/TNS.2010.2101616
DO - 10.1109/TNS.2010.2101616
M3 - Article
AN - SCOPUS:79959375816
SN - 0018-9499
VL - 58
SP - 793
EP - 799
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
IS - 3 PART 2
M1 - 5715907
ER -