TY - GEN
T1 - Modeling high frequency response of nanometer SOI devices using monte carlo transient technique
AU - Mendez-V, J.
AU - Vasileska, D.
AU - Gutierrez, E. A.
AU - Raleva, K.
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - The SOI technologies present several intrinsic advantages for analog and RF applications. Indeed, these technologies allow the reduction of the power consumption at a given operating frequency. Because of these properties, nanometer SOI devices are considered as one of the best options for the implementation of 5G communication technology. Hence, characterization of the high frequency performance of nanometer MOSFETs is needed. Ensemble Monte Carlo device simulator is implemented for this purpose to characterize the high frequency performance of 45 nm nanometer technology node partially-depleted SOI devices. Simulation results for the Y-and S-parameters agree with experimental data, which validates our theoretical model, and suggests that our simulator is able to predict high-frequency operation of a variety of SOI devices from different technology nodes.
AB - The SOI technologies present several intrinsic advantages for analog and RF applications. Indeed, these technologies allow the reduction of the power consumption at a given operating frequency. Because of these properties, nanometer SOI devices are considered as one of the best options for the implementation of 5G communication technology. Hence, characterization of the high frequency performance of nanometer MOSFETs is needed. Ensemble Monte Carlo device simulator is implemented for this purpose to characterize the high frequency performance of 45 nm nanometer technology node partially-depleted SOI devices. Simulation results for the Y-and S-parameters agree with experimental data, which validates our theoretical model, and suggests that our simulator is able to predict high-frequency operation of a variety of SOI devices from different technology nodes.
KW - High frequency response
KW - S-parameters
KW - SOI devices
KW - Transient Ensemble Monte Carlo device simulations
UR - http://www.scopus.com/inward/record.url?scp=85169605526&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85169605526&partnerID=8YFLogxK
U2 - 10.1109/LAEDC58183.2023.10209138
DO - 10.1109/LAEDC58183.2023.10209138
M3 - Conference contribution
AN - SCOPUS:85169605526
T3 - 2023 IEEE Latin American Electron Devices Conference, LAEDC 2023
BT - 2023 IEEE Latin American Electron Devices Conference, LAEDC 2023
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2023 IEEE Latin American Electron Devices Conference, LAEDC 2023
Y2 - 3 July 2023 through 5 July 2023
ER -