Modeling high frequency response of nanometer SOI devices using monte carlo transient technique

J. Mendez-V; D. Vasileska; E. A. Gutierrez; K. Raleva

doi:10.1109/LAEDC58183.2023.10209138

Modeling high frequency response of nanometer SOI devices using monte carlo transient technique

J. Mendez-V, D. Vasileska, E. A. Gutierrez, K. Raleva

Engineering, Ira A. Fulton Schools of (IAFSE)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The SOI technologies present several intrinsic advantages for analog and RF applications. Indeed, these technologies allow the reduction of the power consumption at a given operating frequency. Because of these properties, nanometer SOI devices are considered as one of the best options for the implementation of 5G communication technology. Hence, characterization of the high frequency performance of nanometer MOSFETs is needed. Ensemble Monte Carlo device simulator is implemented for this purpose to characterize the high frequency performance of 45 nm nanometer technology node partially-depleted SOI devices. Simulation results for the Y-and S-parameters agree with experimental data, which validates our theoretical model, and suggests that our simulator is able to predict high-frequency operation of a variety of SOI devices from different technology nodes.

Original language	English (US)
Title of host publication	2023 IEEE Latin American Electron Devices Conference, LAEDC 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350311907
DOIs	https://doi.org/10.1109/LAEDC58183.2023.10209138
State	Published - 2023
Event	2023 IEEE Latin American Electron Devices Conference, LAEDC 2023 - Puebla, Mexico Duration: Jul 3 2023 → Jul 5 2023

Publication series

Name	2023 IEEE Latin American Electron Devices Conference, LAEDC 2023

Conference

Conference	2023 IEEE Latin American Electron Devices Conference, LAEDC 2023
Country/Territory	Mexico
City	Puebla
Period	7/3/23 → 7/5/23

Keywords

High frequency response
S-parameters
SOI devices
Transient Ensemble Monte Carlo device simulations

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/LAEDC58183.2023.10209138

Cite this

Mendez-V, J., Vasileska, D., Gutierrez, E. A., & Raleva, K. (2023). Modeling high frequency response of nanometer SOI devices using monte carlo transient technique. In 2023 IEEE Latin American Electron Devices Conference, LAEDC 2023 (2023 IEEE Latin American Electron Devices Conference, LAEDC 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LAEDC58183.2023.10209138

Modeling high frequency response of nanometer SOI devices using monte carlo transient technique. / Mendez-V, J.; Vasileska, D.; Gutierrez, E. A. et al.
2023 IEEE Latin American Electron Devices Conference, LAEDC 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 IEEE Latin American Electron Devices Conference, LAEDC 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mendez-V, J, Vasileska, D, Gutierrez, EA & Raleva, K 2023, Modeling high frequency response of nanometer SOI devices using monte carlo transient technique. in 2023 IEEE Latin American Electron Devices Conference, LAEDC 2023. 2023 IEEE Latin American Electron Devices Conference, LAEDC 2023, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE Latin American Electron Devices Conference, LAEDC 2023, Puebla, Mexico, 7/3/23. https://doi.org/10.1109/LAEDC58183.2023.10209138

Mendez-V J, Vasileska D, Gutierrez EA, Raleva K. Modeling high frequency response of nanometer SOI devices using monte carlo transient technique. In 2023 IEEE Latin American Electron Devices Conference, LAEDC 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (2023 IEEE Latin American Electron Devices Conference, LAEDC 2023). doi: 10.1109/LAEDC58183.2023.10209138

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abstract = "The SOI technologies present several intrinsic advantages for analog and RF applications. Indeed, these technologies allow the reduction of the power consumption at a given operating frequency. Because of these properties, nanometer SOI devices are considered as one of the best options for the implementation of 5G communication technology. Hence, characterization of the high frequency performance of nanometer MOSFETs is needed. Ensemble Monte Carlo device simulator is implemented for this purpose to characterize the high frequency performance of 45 nm nanometer technology node partially-depleted SOI devices. Simulation results for the Y-and S-parameters agree with experimental data, which validates our theoretical model, and suggests that our simulator is able to predict high-frequency operation of a variety of SOI devices from different technology nodes.",

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author = "J. Mendez-V and D. Vasileska and Gutierrez, {E. A.} and K. Raleva",

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N2 - The SOI technologies present several intrinsic advantages for analog and RF applications. Indeed, these technologies allow the reduction of the power consumption at a given operating frequency. Because of these properties, nanometer SOI devices are considered as one of the best options for the implementation of 5G communication technology. Hence, characterization of the high frequency performance of nanometer MOSFETs is needed. Ensemble Monte Carlo device simulator is implemented for this purpose to characterize the high frequency performance of 45 nm nanometer technology node partially-depleted SOI devices. Simulation results for the Y-and S-parameters agree with experimental data, which validates our theoretical model, and suggests that our simulator is able to predict high-frequency operation of a variety of SOI devices from different technology nodes.

AB - The SOI technologies present several intrinsic advantages for analog and RF applications. Indeed, these technologies allow the reduction of the power consumption at a given operating frequency. Because of these properties, nanometer SOI devices are considered as one of the best options for the implementation of 5G communication technology. Hence, characterization of the high frequency performance of nanometer MOSFETs is needed. Ensemble Monte Carlo device simulator is implemented for this purpose to characterize the high frequency performance of 45 nm nanometer technology node partially-depleted SOI devices. Simulation results for the Y-and S-parameters agree with experimental data, which validates our theoretical model, and suggests that our simulator is able to predict high-frequency operation of a variety of SOI devices from different technology nodes.

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Modeling high frequency response of nanometer SOI devices using monte carlo transient technique

Abstract

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Keywords

ASJC Scopus subject areas

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