Third generation concepts in photovoltaic devices depend critically on the dynamics of ultrafast carrier relaxation and electron-phonon interactions on very short times scales in nanostructures such as quantum wells, wires and dots. Hot carrier solar cells in particular depend on the reduction in the energy relaxation rate in an absorber material, where hot carriers are extracted through energy selective contacts. Here we investigate the short time carrier relaxation in quantum well, hot electron solar cells under varying photoexcitation conditions using ensemble Monte Carlo (EMC) simulation coupled with rate equation models, to understand the limiting factors affecting cell performance. In particular, we focus on the potential role of hot phonons in reducing the energy loss rate in order to achieve sufficient carrier temperature for efficient performance.

Original languageEnglish (US)
Title of host publicationPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices
StatePublished - 2012
EventPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices - San Francisco, CA, United States
Duration: Jan 23 2012Jan 26 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices
Country/TerritoryUnited States
CitySan Francisco, CA


  • Hot carrier solar cells
  • Hot phonons
  • Monte Carlo simulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Modeling carrier relaxation in hot carrier solar cells'. Together they form a unique fingerprint.

Cite this