TY - JOUR
T1 - MOCVD of platinum films from (CH3)3CH 3CpPt and Pt(acac)2
T2 - Nanostructure, conformality, and electrical resistivity
AU - Goswami, Jaydeb
AU - Wang, Chang Gong
AU - Cao, Wei
AU - Dey, Sandwip
PY - 2003/8
Y1 - 2003/8
N2 - A potentially manufacturable liquid-source MOCVD process was applied to deposit platinum (Pt) films (12-140 nm) on thermally oxidized Si substrates. The deposition of Pt films was carried out at a substrate temperature of 350°C by oxygen-assisted pyrolysis of complex precursors in a low-pressure, hot-wall reactor. The effects of two different metal-organic precursors, a) trimethyl methyl cyclopentadienyl platinum [(CH3)3CH 3CpPt], and b) platinum acetylacetonate [Pt(acac)2], on the properties of Pt films were studied. Although the polycrystalline Pt films deposited from Pt(acac)2 exhibited a preferred (111) orientation with a X-ray intensity ratio of I(111)/I(200) = 40, the films deposited from (CH3)3CH3CpPt were highly (111) oriented with I(111)/I(200) = 270. The following properties were typical of Pt films from Pt(acac)2 as compared to Pt films from (CH3)3CH3CpPt: finer grain size (25 nm vs. 50 nm), smaller root mean square (rms) surface roughness (5 nm vs. 15 nm), and better step coverage (95 % vs. 35 %). These experimental findings indicated that growth of Pt films from Pt(acac)2 occurred under the kinetically-limited regime, whereas the deposition of Pt from (CH 3)3CH3CpPt was limited by the mass transport rate. Additionally, the temperature (4.2-293 K) dependence of the electrical resistivities (p) of Pt films was measured and the electron mean free paths were estimated. It was observed that ρ(T) deviated from Matthiessen's rule.
AB - A potentially manufacturable liquid-source MOCVD process was applied to deposit platinum (Pt) films (12-140 nm) on thermally oxidized Si substrates. The deposition of Pt films was carried out at a substrate temperature of 350°C by oxygen-assisted pyrolysis of complex precursors in a low-pressure, hot-wall reactor. The effects of two different metal-organic precursors, a) trimethyl methyl cyclopentadienyl platinum [(CH3)3CH 3CpPt], and b) platinum acetylacetonate [Pt(acac)2], on the properties of Pt films were studied. Although the polycrystalline Pt films deposited from Pt(acac)2 exhibited a preferred (111) orientation with a X-ray intensity ratio of I(111)/I(200) = 40, the films deposited from (CH3)3CH3CpPt were highly (111) oriented with I(111)/I(200) = 270. The following properties were typical of Pt films from Pt(acac)2 as compared to Pt films from (CH3)3CH3CpPt: finer grain size (25 nm vs. 50 nm), smaller root mean square (rms) surface roughness (5 nm vs. 15 nm), and better step coverage (95 % vs. 35 %). These experimental findings indicated that growth of Pt films from Pt(acac)2 occurred under the kinetically-limited regime, whereas the deposition of Pt from (CH 3)3CH3CpPt was limited by the mass transport rate. Additionally, the temperature (4.2-293 K) dependence of the electrical resistivities (p) of Pt films was measured and the electron mean free paths were estimated. It was observed that ρ(T) deviated from Matthiessen's rule.
KW - Liquid source
KW - MOCVD
KW - Platinum
KW - Thin film
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U2 - 10.1002/cvde.200306240
DO - 10.1002/cvde.200306240
M3 - Article
AN - SCOPUS:1642624584
SN - 0948-1907
VL - 9
SP - 213
EP - 220
JO - Chemical Vapor Deposition
JF - Chemical Vapor Deposition
IS - 4
ER -