Abstract
The authors have grown thermal oxides on the silicon cap layer of modulation doped n-channel Si:SiGe quantum wells. For growth temperatures of 650°C they have observed a degradation of the low temperature electron mobility accompanied by a small increase in the sheet density. Some possible origins for this mobility degradation are discussed.
Original language | English (US) |
---|---|
Pages (from-to) | 1876-1878 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 31 |
Issue number | 21 |
DOIs | |
State | Published - Oct 12 1995 |
Externally published | Yes |
Keywords
- Carrier mobility
- Semiconductor quantum wells
- Silicon-germanium
ASJC Scopus subject areas
- Electrical and Electronic Engineering