Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN

Alec M. Fischer; Zhihao Wu; Kewei Sun; Qiyuan Wei; Yu Huang; Ryota Senda; Daisuke Iida; Motoaki Iwaya; Hiroshi Amano; Fernando Ponce

doi:10.1143/APEX.2.041002

Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN

Alec M. Fischer, Zhihao Wu, Kewei Sun, Qiyuan Wei, Yu Huang, Ryota Senda, Daisuke Iida, Motoaki Iwaya, Hiroshi Amano, Fernando Ponce

Physics

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

InGaN quantum wells, grown on non-polar m-plane GaN and emitting light at 560 nm, experience lattice mismatch strain relaxation by the generation of stacking faults. Each stacking fault terminates a basal plane from the substrate side, generating misfit dislocations that have a Burgers vector with a 1/2[0001] component. The structural and optical properties of such thin film structures are reported.

Original language	English (US)
Pages (from-to)	410021-410023
Number of pages	3
Journal	Applied Physics Express
Volume	2
Issue number	4
DOIs	https://doi.org/10.1143/APEX.2.041002
State	Published - Apr 2009

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN",

abstract = "InGaN quantum wells, grown on non-polar m-plane GaN and emitting light at 560 nm, experience lattice mismatch strain relaxation by the generation of stacking faults. Each stacking fault terminates a basal plane from the substrate side, generating misfit dislocations that have a Burgers vector with a 1/2[0001] component. The structural and optical properties of such thin film structures are reported.",

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AU - Fischer, Alec M.

AU - Wu, Zhihao

AU - Sun, Kewei

AU - Wei, Qiyuan

AU - Huang, Yu

AU - Senda, Ryota

AU - Iida, Daisuke

AU - Iwaya, Motoaki

AU - Amano, Hiroshi

AU - Ponce, Fernando

PY - 2009/4

Y1 - 2009/4

N2 - InGaN quantum wells, grown on non-polar m-plane GaN and emitting light at 560 nm, experience lattice mismatch strain relaxation by the generation of stacking faults. Each stacking fault terminates a basal plane from the substrate side, generating misfit dislocations that have a Burgers vector with a 1/2[0001] component. The structural and optical properties of such thin film structures are reported.

AB - InGaN quantum wells, grown on non-polar m-plane GaN and emitting light at 560 nm, experience lattice mismatch strain relaxation by the generation of stacking faults. Each stacking fault terminates a basal plane from the substrate side, generating misfit dislocations that have a Burgers vector with a 1/2[0001] component. The structural and optical properties of such thin film structures are reported.

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JO - Applied Physics Express

JF - Applied Physics Express

IS - 4

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Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN

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