Misfit dislocations in GaAs heteroepitaxy on (001) Si

D. Gerthsen; D. K. Biegelsen; F. A. Ponce; J. C. Tramontana

doi:10.1016/0022-0248(90)90059-T

Misfit dislocations in GaAs heteroepitaxy on (001) Si

D. Gerthsen, D. K. Biegelsen, F. A. Ponce, J. C. Tramontana

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31 Scopus citations

Abstract

Transmission electron microscopy (TEM) is used to analyse the atomic structure and morphology of misfit dislocations, stacking faults and microtwins at the (001) GaAs on Si interface. Common structural features of GaAs grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) are discussed rather than a series of samples grown under specific growth conditions. In addition to the two well-characterized misfit dislocation types with 1 2a〈110〉 Burgers vectors, part ial dislocations are shown to play a significant role in the mismatch relaxation process terminating stacking faults and microtwins.

Original language	English (US)
Pages (from-to)	157-165
Number of pages	9
Journal	Journal of Crystal Growth
Volume	106
Issue number	2-3
DOIs	https://doi.org/10.1016/0022-0248(90)90059-T
State	Published - Nov 1990
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(90)90059-T

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title = "Misfit dislocations in GaAs heteroepitaxy on (001) Si",

abstract = "Transmission electron microscopy (TEM) is used to analyse the atomic structure and morphology of misfit dislocations, stacking faults and microtwins at the (001) GaAs on Si interface. Common structural features of GaAs grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) are discussed rather than a series of samples grown under specific growth conditions. In addition to the two well-characterized misfit dislocation types with 1 2a〈110〉 Burgers vectors, part ial dislocations are shown to play a significant role in the mismatch relaxation process terminating stacking faults and microtwins.",

author = "D. Gerthsen and Biegelsen, {D. K.} and Ponce, {F. A.} and Tramontana, {J. C.}",

year = "1990",

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T1 - Misfit dislocations in GaAs heteroepitaxy on (001) Si

AU - Gerthsen, D.

AU - Biegelsen, D. K.

AU - Ponce, F. A.

AU - Tramontana, J. C.

PY - 1990/11

Y1 - 1990/11

N2 - Transmission electron microscopy (TEM) is used to analyse the atomic structure and morphology of misfit dislocations, stacking faults and microtwins at the (001) GaAs on Si interface. Common structural features of GaAs grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) are discussed rather than a series of samples grown under specific growth conditions. In addition to the two well-characterized misfit dislocation types with 1 2a〈110〉 Burgers vectors, part ial dislocations are shown to play a significant role in the mismatch relaxation process terminating stacking faults and microtwins.

AB - Transmission electron microscopy (TEM) is used to analyse the atomic structure and morphology of misfit dislocations, stacking faults and microtwins at the (001) GaAs on Si interface. Common structural features of GaAs grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) are discussed rather than a series of samples grown under specific growth conditions. In addition to the two well-characterized misfit dislocation types with 1 2a〈110〉 Burgers vectors, part ial dislocations are shown to play a significant role in the mismatch relaxation process terminating stacking faults and microtwins.

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Misfit dislocations in GaAs heteroepitaxy on (001) Si

Abstract

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