Minority carrier lifetime and photoluminescence of mid-wave infrared InAsSbBi

Priyanka Petluru, Perry C. Grant, Aaron J. Muhowski, Isabella M. Obermeier, Marko S. Milosavljevic, Shane R. Johnson, Daniel Wasserman, Elizabeth H. Steenbergen, Preston T. Webster

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5 Scopus citations


Time-resolved photoluminescence measurements are reported for InAsSbBi alloys grown by molecular beam epitaxy with Bi mole fractions ranging from 0 to 0.8%, yielding minority carrier lifetimes on the order of hundreds of nanoseconds. The minority carrier lifetimes extracted from the time-resolved photoluminescence measurements are comparable to those of lattice-matched InAsSb grown at the same respective temperatures. Nomarski imaging shows that smooth, droplet-free surface morphologies are obtained in 1 μm thick InAsSbBi epilayers grown at temperatures between 360 and 380 °C. The alloy composition-dependent bandgap energies for the InAsSbBi samples are determined from temperature-dependent steady-state photoluminescence measurements and compared with the tetragonal distortion measured by x-ray diffraction to determine the Sb and Bi mole fractions of each sample. The minority carrier lifetime and the achievable extension of the InAsSb(Bi) cut-off wavelength are analyzed as functions of alloy composition and compared with the performance of InAsSb layers with similar growth parameters.

Original languageEnglish (US)
Article number061103
JournalApplied Physics Letters
Issue number6
StatePublished - Aug 10 2020

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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