Midwave infrared stimulated emission from a GaInSb/InAs superlattice

R. H. Miles, D. H. Chow, Y. H. Zhang, P. D. Brewer, R. G. Wilson

Research output: Contribution to journalArticlepeer-review

94 Scopus citations


Use of a cracked Sb source and a postgrowth anneal procedure has been found to yield significant improvements in optical efficiencies of GaInSb/InAs superlattices grown by molecular beam epitaxy. Appreciable 5 μm band-to-band luminescence has been observed at room temperature, and stimulated emission at 3.2 μm has been demonstrated in an optically pumped structure. Intrinsic properties of this class of superlattices favor them for application as efficient infrared lasers operating at comparatively high temperatures.

Original languageEnglish (US)
Pages (from-to)1921
Number of pages1
JournalApplied Physics Letters
StatePublished - 1995
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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