Mid-Infrared GeSn/SiGeSn Lasers and Photodetectors Monolithically Integrated on Silicon

Yiyin Zhou; Huong Tran; Wei Du; Jifeng Liu; Greg Sun; Richard Soref; Joe Margetis; John Tolle; Yong Hang Zhang; Baohua Li; Mansour Mortazavi; Shui Qing Yu

Mid-Infrared GeSn/SiGeSn Lasers and Photodetectors Monolithically Integrated on Silicon

Yiyin Zhou, Huong Tran, Wei Du, Jifeng Liu, Greg Sun, Richard Soref, Joe Margetis, John Tolle, Yong Hang Zhang, Baohua Li, Mansour Mortazavi, Shui Qing Yu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrated optically pumped GeSn lasers operating at 270 K and 3.5 μm, and photodetectors with spectral response cutoff at 3.65 μm and 300 K. Latest progress on electrically injected lasers will also be reported.

Original language	English (US)
Title of host publication	2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781943580767
State	Published - May 2020
Externally published	Yes
Event	2020 Conference on Lasers and Electro-Optics, CLEO 2020 - San Jose, United States Duration: May 10 2020 → May 15 2020

Publication series

Name	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2020-May
ISSN (Print)	1092-8081

Conference

Conference	2020 Conference on Lasers and Electro-Optics, CLEO 2020
Country/Territory	United States
City	San Jose
Period	5/10/20 → 5/15/20

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Zhou, Y., Tran, H., Du, W., Liu, J., Sun, G., Soref, R., Margetis, J., Tolle, J., Zhang, Y. H., Li, B., Mortazavi, M., & Yu, S. Q. (2020). Mid-Infrared GeSn/SiGeSn Lasers and Photodetectors Monolithically Integrated on Silicon. In 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings Article 9192550 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS; Vol. 2020-May). Institute of Electrical and Electronics Engineers Inc..

Mid-Infrared GeSn/SiGeSn Lasers and Photodetectors Monolithically Integrated on Silicon. / Zhou, Yiyin; Tran, Huong; Du, Wei et al.
2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. 9192550 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS; Vol. 2020-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhou, Y, Tran, H, Du, W, Liu, J, Sun, G, Soref, R, Margetis, J, Tolle, J, Zhang, YH, Li, B, Mortazavi, M & Yu, SQ 2020, Mid-Infrared GeSn/SiGeSn Lasers and Photodetectors Monolithically Integrated on Silicon. in 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings., 9192550, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, vol. 2020-May, Institute of Electrical and Electronics Engineers Inc., 2020 Conference on Lasers and Electro-Optics, CLEO 2020, San Jose, United States, 5/10/20.

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title = "Mid-Infrared GeSn/SiGeSn Lasers and Photodetectors Monolithically Integrated on Silicon",

abstract = "We demonstrated optically pumped GeSn lasers operating at 270 K and 3.5 μm, and photodetectors with spectral response cutoff at 3.65 μm and 300 K. Latest progress on electrically injected lasers will also be reported.",

author = "Yiyin Zhou and Huong Tran and Wei Du and Jifeng Liu and Greg Sun and Richard Soref and Joe Margetis and John Tolle and Zhang, {Yong Hang} and Baohua Li and Mansour Mortazavi and Yu, {Shui Qing}",

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AU - Zhou, Yiyin

AU - Tran, Huong

AU - Du, Wei

AU - Liu, Jifeng

AU - Sun, Greg

AU - Soref, Richard

AU - Margetis, Joe

AU - Tolle, John

AU - Zhang, Yong Hang

AU - Li, Baohua

AU - Mortazavi, Mansour

AU - Yu, Shui Qing

PY - 2020/5

Y1 - 2020/5

N2 - We demonstrated optically pumped GeSn lasers operating at 270 K and 3.5 μm, and photodetectors with spectral response cutoff at 3.65 μm and 300 K. Latest progress on electrically injected lasers will also be reported.

AB - We demonstrated optically pumped GeSn lasers operating at 270 K and 3.5 μm, and photodetectors with spectral response cutoff at 3.65 μm and 300 K. Latest progress on electrically injected lasers will also be reported.

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M3 - Conference contribution

AN - SCOPUS:85091649196

T3 - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

BT - 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 Conference on Lasers and Electro-Optics, CLEO 2020

Y2 - 10 May 2020 through 15 May 2020

ER -

Mid-Infrared GeSn/SiGeSn Lasers and Photodetectors Monolithically Integrated on Silicon

Abstract

Publication series

Conference

ASJC Scopus subject areas

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