Microstructure of InxGa1-xN thick epitaxial layers

L. Geng, S. Srinivasan, R. Liu, B. Jiang, H. Omiya, Fernando Ponce, S. Tanaka, Y. Nakagawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution


0.μm thick InxGa1-xN epitaxial layers were grown by metal organic chemical vapor deposition on undoped GaN. GaN layers were ∼2.7μm thick and were grown on c-plane sapphire using low-temperature GaN buffer layers. Convergent-beam electron diffraction (CBED) was used to observe the local strain and dislocation density. The indium concentration of the InxGa1-xN was measured by Rutherford backscattering spectrometry (RBS). Using scanning electron microscopy and transmission electron microscopy InxGa1-xN layers cathodoluminescence spectra were studied.

Original languageEnglish (US)
Title of host publication2003 International Symposium on Compound Semiconductors, ISCS 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Electronic)0780378202
StatePublished - 2003
Event2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
Duration: Aug 25 2003Aug 27 2003

Publication series

NameIEEE International Symposium on Compound Semiconductors, Proceedings


Other2003 International Symposium on Compound Semiconductors, ISCS 2003
Country/TerritoryUnited States
CitySan Diego


  • Buffer layers
  • Capacitive sensors
  • Chemical vapor deposition
  • Diffraction
  • Epitaxial layers
  • Gallium nitride
  • Microstructure
  • Organic chemicals
  • Scanning electron microscopy
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials


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