Abstract
The microstructure of In xGa 1-xN quantum wells with intermediate indium concentrations (x = 0.28 and 0.52) has been studied using transmission electron microscopy. High-resolution lattice images and dark-field images taken under high tilt conditions indicate that the quantum wells are inhomogeneous in character. Most of the area of the quantum wells is pseudomorphic with the GaN adjacent layer. However, misfit dislocations are sometimes observed, although with an inhomogeneous distribution. Strained cluster regions are observed in the high-indium concentration quantum wells, with dimensions ranging from 3 to 10 nm in diameter. Evidence is presented suggesting the extent of clustering depends on the exact orientation of the growth surface which is related to the columnar nature of the GaN/sapphire epitaxy.
Original language | English (US) |
---|---|
Title of host publication | Materials Research Society Symposium - Proceedings |
Editors | S.R. Phillpot, P.D. Bristowe, D.G. Stroud, J.R. Smith |
Publisher | MRS |
Pages | 453-458 |
Number of pages | 6 |
Volume | 482 |
State | Published - 1997 |
Externally published | Yes |
Event | Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Duration: Dec 1 1997 → Dec 4 1997 |
Other
Other | Proceedings of the 1997 MRS Fall Meeting |
---|---|
City | Boston, MA, USA |
Period | 12/1/97 → 12/4/97 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials