Microscopy | Semiconductors

D. J. Smith, M. R. McCartney

Research output: Chapter in Book/Report/Conference proceedingChapter


The transmission electron microscope provides structural and chemical information over a wide range of magnification. Imaging, diffraction, and microanalytical modes can be used individually or in combination to extract essential information about semiconductor materials and devices. Available techniques include transmission and high-resolution electron microscopy, electron-energy-loss and energy-dispersive x-ray spectroscopy, and convergent-beam electron diffraction. Advanced methods include electron holography, cathodoluminescence, and Z-contrast annular-dark-field imaging. Aberration-corrected electron microscopy coupled with spectrum imaging promises unprecedented insights into atomic structure and chemistry at the 0.1 nm scale. This article reviews applications to semiconductor materials that demonstrate the versatility and power of the instrument.

Original languageEnglish (US)
Title of host publicationEncyclopedia of Analytical Science
Number of pages9
ISBN (Electronic)9780081019832
ISBN (Print)9780081019849
StatePublished - Jan 1 2019


  • Aberration-corrected electron microscopy
  • Cathodoluminescence
  • Convergent beam electron diffraction
  • Electron holography
  • Electron-energy-loss spectroscopy
  • Energy-dispersive x-ray spectroscopy
  • High-resolution electron microscopy
  • Transmission electron microscopy

ASJC Scopus subject areas

  • General Chemistry


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