Microscopic aspects of oxygen precipitation in silicon

F. A. Ponce, S. Hahn

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


In this review, using thermodynamic and kinetic considerations, we explain (1) the proper implication of transport-limited growth, (2) various quasi-equilibrium, morphological and structural characteristics of thermally induced oxide precipitates and secondary crystallographic defects and (3) various electrically active and inactive impurity effects upon oxygen precipitation in Czochralski silicon. A model based upon the formation of Frenkel defects at the silicon-silica interface has shown promise on microscopic accounts of various experimentally observed precipitation behaviors.

Original languageEnglish (US)
Pages (from-to)11-17
Number of pages7
JournalMaterials Science and Engineering B
Issue number1-4
StatePublished - Oct 1989
Externally publishedYes

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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