Method to Synthesize Aluminum-Galium-Nitride Nanocrystalline Powders

Fernando Ponce (Inventor)

Research output: Patent


Wide bandgap semiconductors are extremely attractive for a gamma of power electronics applications from power conditioning to microwave transmitters for communications and radar. Of the various materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising.Applications in electroluminescent devices and as free-standing materials quantum confinement effects can be achieved in nano-sized particles. Furthermore, the wide bandgap offers a rugged and reliable technology capable of high-voltage high-temperature operation. This opens up several inductrial, automotive, computer and aircraft applications, such as UV emitters and detectors.
Original languageEnglish (US)
StatePublished - Sep 1 2006


Dive into the research topics of 'Method to Synthesize Aluminum-Galium-Nitride Nanocrystalline Powders'. Together they form a unique fingerprint.

Cite this