Metamorphic GaInP/GaInAs/Ge solar cells

R. R. King, M. Haddad, T. Isshiki, P. Colter, J. Ermer, H. Yoon, D. E. Joslin, N. H. Karam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

44 Scopus citations


High-efficiency, metamorphic multijunction cells have been fabricated by growing GaInP/GaInAs subcells that are lattice-mismatched to an active Ge substrate, resulting in GaInP/GaInAs/Ge 3-junction (3J) cells. The efficiency dependence of this 3J cell on lattice-constant of the top two cells and on sub-lattice ordering in the GaInP top cell is presented. A variety of composition-graded buffers have been explored through X-ray diffraction reciprocal space mapping to measure strain in the cell layers, and transmission electron microscopy to minimize misfit and threading dislocations. Quantum efficiency is measured for metamorphic 1.3-eV Ga0.92In0.08As (8%-In GalnAs) cells and 1.75-eV Ga0.43In0.57P cells grown on a Ge substrate, as well as for the 3J cell based on 4%-In GalnAs. Three-junction Ga0.43In0.57P/Ga0.92In0.08As/Ge cells with 0.50% lattice-mismatch to the Ge substrate are measured to have AM0 efficiency of 27.3% (0.1353 W/cm2, 28°C), similar to high-efficiency, conventional GaInP/GaAs/Ge 3-junction cells based on the GaAs lattice constant.

Original languageEnglish (US)
Title of host publicationConference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)0780357728
StatePublished - Jan 1 2000
Externally publishedYes
Event28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States
Duration: Sep 15 2000Sep 22 2000

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Other28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Country/TerritoryUnited States

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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