Mesoscopic transport properties of in-plane gate defined quantum wires

David P. Pivin, David K. Ferry

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


We study the resistance of narrow AlGaAs/GaAs in-plane gate quantum wires versus gate voltage and magnetic field at 1.2 K. A practical method of determining the effective width of the wire is presented. A transition to boundary dominant scattering occurs as the effective width is decreased and becomes comparable to the mean free path. Beyond this transition, an alternative mean free path, l = αW, is used. Results for effective width compare well to those from the estimate due to the onset of Landau quantization at W ≈ rC. The in-plane gate structure is proposed as a suitable system for studying mesoscopic phenomena, specifically the scaling of universal conductance fluctuations.

Original languageEnglish (US)
Pages (from-to)50-53
Number of pages4
JournalPhysica B: Condensed Matter
Issue number1-4
StatePublished - Sep 1996


  • Effective width
  • In-plane gate
  • Quantum wire

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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