Mechanism of H 2 pre-annealing on the growth of GaN on sapphire by MOVPE

Michinobu Tsuda, Kenichi Watanabe, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Rong Liu, Abigail Bell, Fernando Ponce

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


Mechanism of hydrogen pre-annealing on the growth of gallium nitride (GaN) on sapphire using metallorganic vapor phase epitaxy was investigated. Several groups reported the influence of the injection at a high temperature before the deposition of a low-temperature buffer layer. It was observed that an atomic step was formed by high-temperature annealing in air.

Original languageEnglish (US)
Pages (from-to)585-589
Number of pages5
JournalApplied Surface Science
Issue number1-4 SPEC.
StatePublished - Jun 30 2003


  • Deoxidization
  • GaN
  • H -annealing
  • Sapphire substrate

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • General Physics and Astronomy
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


Dive into the research topics of 'Mechanism of H 2 pre-annealing on the growth of GaN on sapphire by MOVPE'. Together they form a unique fingerprint.

Cite this