Measurement of field emission from nitrogen-doped diamond films

A. T. Sowers; B. L. Ward; S. L. English; R. J. Nemanich

doi:10.1016/S0925-9635(00)00304-6

Measurement of field emission from nitrogen-doped diamond films

A. T. Sowers, B. L. Ward, S. L. English, R. J. Nemanich

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

This study explores issues related to the measurement of the field emission properties of nitrogen-doped diamond grown by microwave plasma chemical vapor deposition (CVD). Growth conditions have been optimized to produce films with a low concentration of sp²-bonded carbon which results in high electrical resistance. Field emission characteristics were measured in an ultrahigh vacuum with a variable distance anode technique. For samples grown with gas phase [N]/[C] ratios less than 10, damage from micro-arcs occurred during the field emission measurements. Samples grown at higher [N]/[C] content could be measured prior to an arcing event. The occurrence of a micro-arc is related to the film properties. The measurements indicate relatively high threshold fields (> 100 V μm^-1) for electron emission.

Original language	English (US)
Pages (from-to)	1569-1573
Number of pages	5
Journal	Diamond and Related Materials
Volume	9
Issue number	9
DOIs	https://doi.org/10.1016/S0925-9635(00)00304-6
State	Published - 2000
Externally published	Yes
Event	5th International Conference on Advanced Materials - Beijing, China Duration: Jun 13 1999 → Jun 18 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/S0925-9635(00)00304-6

Cite this

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title = "Measurement of field emission from nitrogen-doped diamond films",

abstract = "This study explores issues related to the measurement of the field emission properties of nitrogen-doped diamond grown by microwave plasma chemical vapor deposition (CVD). Growth conditions have been optimized to produce films with a low concentration of sp2-bonded carbon which results in high electrical resistance. Field emission characteristics were measured in an ultrahigh vacuum with a variable distance anode technique. For samples grown with gas phase [N]/[C] ratios less than 10, damage from micro-arcs occurred during the field emission measurements. Samples grown at higher [N]/[C] content could be measured prior to an arcing event. The occurrence of a micro-arc is related to the film properties. The measurements indicate relatively high threshold fields (> 100 V μm-1) for electron emission.",

author = "Sowers, {A. T.} and Ward, {B. L.} and English, {S. L.} and Nemanich, {R. J.}",

note = "Funding Information: We gratefully acknowledge the financial support of the Office of Naval Research, and the FCT Project through the Japan Fine Ceramics Center.; 5th International Conference on Advanced Materials ; Conference date: 13-06-1999 Through 18-06-1999",

year = "2000",

doi = "10.1016/S0925-9635(00)00304-6",

language = "English (US)",

volume = "9",

pages = "1569--1573",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

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TY - JOUR

T1 - Measurement of field emission from nitrogen-doped diamond films

AU - Sowers, A. T.

AU - Ward, B. L.

AU - English, S. L.

AU - Nemanich, R. J.

N1 - Funding Information: We gratefully acknowledge the financial support of the Office of Naval Research, and the FCT Project through the Japan Fine Ceramics Center.

PY - 2000

Y1 - 2000

N2 - This study explores issues related to the measurement of the field emission properties of nitrogen-doped diamond grown by microwave plasma chemical vapor deposition (CVD). Growth conditions have been optimized to produce films with a low concentration of sp2-bonded carbon which results in high electrical resistance. Field emission characteristics were measured in an ultrahigh vacuum with a variable distance anode technique. For samples grown with gas phase [N]/[C] ratios less than 10, damage from micro-arcs occurred during the field emission measurements. Samples grown at higher [N]/[C] content could be measured prior to an arcing event. The occurrence of a micro-arc is related to the film properties. The measurements indicate relatively high threshold fields (> 100 V μm-1) for electron emission.

AB - This study explores issues related to the measurement of the field emission properties of nitrogen-doped diamond grown by microwave plasma chemical vapor deposition (CVD). Growth conditions have been optimized to produce films with a low concentration of sp2-bonded carbon which results in high electrical resistance. Field emission characteristics were measured in an ultrahigh vacuum with a variable distance anode technique. For samples grown with gas phase [N]/[C] ratios less than 10, damage from micro-arcs occurred during the field emission measurements. Samples grown at higher [N]/[C] content could be measured prior to an arcing event. The occurrence of a micro-arc is related to the film properties. The measurements indicate relatively high threshold fields (> 100 V μm-1) for electron emission.

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UR - http://www.scopus.com/inward/citedby.url?scp=0034275851&partnerID=8YFLogxK

U2 - 10.1016/S0925-9635(00)00304-6

DO - 10.1016/S0925-9635(00)00304-6

M3 - Conference article

AN - SCOPUS:0034275851

SN - 0925-9635

VL - 9

SP - 1569

EP - 1573

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 9

T2 - 5th International Conference on Advanced Materials

Y2 - 13 June 1999 through 18 June 1999

ER -

Measurement of field emission from nitrogen-doped diamond films

Abstract

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