Abstract
Growth of ZnTe on Si using molecular beam epitaxy (MBE) has been pursued as a new approach for a lattice-matched, large-area, low-cost alternate substrate for both II-VI and III-V compound semiconductors with lattice constants very near 6.1 Å , such as HgCdSe and GaSb-based type II strained-layer superlattices. In this paper, we report our findings on the systematic study of MBE growth parameters for both ZnTe(211) on Si(211) and ZnTe(100) on Si(100). Near-optimal growth procedures have been established for producing ZnTe/Si wafers with high crystallinity, low defect and etch pit densities, as well as excellent surface morphology. Using this baseline MBE growth process, we obtained ZnTe(211)/Si wafers with x-ray full-width at half-maximum as low as 70 arcsec.
Original language | English (US) |
---|---|
Pages (from-to) | 2917-2924 |
Number of pages | 8 |
Journal | Journal of Electronic Materials |
Volume | 41 |
Issue number | 10 |
DOIs | |
State | Published - Oct 2012 |
Keywords
- HgCdSe
- MBE
- Si
- T2-SLS
- ZnSeTe
- ZnTe
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry