Maxwellian charge on domain walls

A. Krishnan, M. M.J. Treacy, M. E. Bisher, P. Chandra, P. B. Littlewood

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Scopus citations


In-situ transmission electron microscopy of domain motion in thinned BaTiOa and KNbO3 shows that curved ferroelectric domains move more readily under low electric fields than do straight domain walls. We show that this relative motility arises because curved domain walls support a Maxwellian displacement charge and therefore experience a direct pressure that is proportional to the electric field E. Conversely, untilted charge-neutral domain walls experience a pressure proportional to E3 due to induced displacement charge, and therefore tend to resist motion at low fields. Any physical process that leads to an increase in density of the immobile chargefree domain walls, relative to the more mobile curved domain walls, could lead to an increase in overall resistance to domain switching, providing an intrinsic contribution to ferroelectric fatigue.

Original languageEnglish (US)
Title of host publicationFundamental Physics of Ferroelectrics 2000
Subtitle of host publicationAspen Center for Physics Winter Workshop
EditorsRonald E. Cohen, Richard A. Mewaldt
PublisherAmerican Institute of Physics Inc.
Number of pages10
ISBN (Electronic)1563969599
StatePublished - Sep 12 2000
Externally publishedYes
EventAspen Center for Physics Winter Workshop on Fundamental Physics of Ferroelectrics 2000 - Aspen, United States
Duration: Feb 13 2000Feb 20 2000

Publication series

NameAIP Conference Proceedings
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616


ConferenceAspen Center for Physics Winter Workshop on Fundamental Physics of Ferroelectrics 2000
Country/TerritoryUnited States

ASJC Scopus subject areas

  • General Physics and Astronomy


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