Manganese-related luminescence in GaInAs/AlInAs multiple quantum wells grown on InP by molecular beam epitaxy

Y. H. Zhang; N. N. Ledentsov; K. Ploog

doi:10.1007/BF00348159

Manganese-related luminescence in GaInAs/AlInAs multiple quantum wells grown on InP by molecular beam epitaxy

Y. H. Zhang, N. N. Ledentsov, K. Ploog

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Two Mn-related luminescence peaks have been observed in a series of nominally undoped Ga_0.47In_0.53As/Al_0.48In_0.52As multiple quantum wells (MQW) grown lattice-matched on InP substrates by molecular beam epitaxy. These two peaks correspond to on-center and on-edge impurity states, respectively. The origin of the Mn impurities is outdiffusion from the Fe-doped semiinsulating InP substrate into the epitaxial layer. The binding energy of Mn acceptors, determined to be 53±3 meV in bulk-like Ga_0.47In_0.53As, increases to 80±5 meV for the on-center Mn state in a 58 Å MQW. The strong well-width dependence of the binding energy is explained in terms of the unique behavior of the Mn impurity in III-V semiconductors. The Mn in Ga_0.47In_0.53As and Ga_0.47In_0.53As/Al_0.48In_0.52As MQWs behaves predominantly as a deep impurity.

Original language	English (US)
Pages (from-to)	437-441
Number of pages	5
Journal	Applied Physics A Solids and Surfaces
Volume	53
Issue number	5
DOIs	https://doi.org/10.1007/BF00348159
State	Published - Nov 1991
Externally published	Yes

Keywords

73.20.Hb
78.55.Cr
78.65.Fa

ASJC Scopus subject areas

Materials Science(all)
Engineering(all)
Physics and Astronomy (miscellaneous)

Access to Document

10.1007/BF00348159

Cite this

@article{b0ebfef804dd4e90a4aa8785025fc06a,

title = "Manganese-related luminescence in GaInAs/AlInAs multiple quantum wells grown on InP by molecular beam epitaxy",

abstract = "Two Mn-related luminescence peaks have been observed in a series of nominally undoped Ga0.47In0.53As/Al0.48In0.52As multiple quantum wells (MQW) grown lattice-matched on InP substrates by molecular beam epitaxy. These two peaks correspond to on-center and on-edge impurity states, respectively. The origin of the Mn impurities is outdiffusion from the Fe-doped semiinsulating InP substrate into the epitaxial layer. The binding energy of Mn acceptors, determined to be 53±3 meV in bulk-like Ga0.47In0.53As, increases to 80±5 meV for the on-center Mn state in a 58 {\AA} MQW. The strong well-width dependence of the binding energy is explained in terms of the unique behavior of the Mn impurity in III-V semiconductors. The Mn in Ga0.47In0.53As and Ga0.47In0.53As/Al0.48In0.52As MQWs behaves predominantly as a deep impurity.",

keywords = "73.20.Hb, 78.55.Cr, 78.65.Fa",

author = "Zhang, {Y. H.} and Ledentsov, {N. N.} and K. Ploog",

year = "1991",

month = nov,

doi = "10.1007/BF00348159",

language = "English (US)",

volume = "53",

pages = "437--441",

journal = "Applied Physics A Solids and Surfaces",

issn = "0721-7250",

number = "5",

}

TY - JOUR

T1 - Manganese-related luminescence in GaInAs/AlInAs multiple quantum wells grown on InP by molecular beam epitaxy

AU - Zhang, Y. H.

AU - Ledentsov, N. N.

AU - Ploog, K.

PY - 1991/11

Y1 - 1991/11

N2 - Two Mn-related luminescence peaks have been observed in a series of nominally undoped Ga0.47In0.53As/Al0.48In0.52As multiple quantum wells (MQW) grown lattice-matched on InP substrates by molecular beam epitaxy. These two peaks correspond to on-center and on-edge impurity states, respectively. The origin of the Mn impurities is outdiffusion from the Fe-doped semiinsulating InP substrate into the epitaxial layer. The binding energy of Mn acceptors, determined to be 53±3 meV in bulk-like Ga0.47In0.53As, increases to 80±5 meV for the on-center Mn state in a 58 Å MQW. The strong well-width dependence of the binding energy is explained in terms of the unique behavior of the Mn impurity in III-V semiconductors. The Mn in Ga0.47In0.53As and Ga0.47In0.53As/Al0.48In0.52As MQWs behaves predominantly as a deep impurity.

AB - Two Mn-related luminescence peaks have been observed in a series of nominally undoped Ga0.47In0.53As/Al0.48In0.52As multiple quantum wells (MQW) grown lattice-matched on InP substrates by molecular beam epitaxy. These two peaks correspond to on-center and on-edge impurity states, respectively. The origin of the Mn impurities is outdiffusion from the Fe-doped semiinsulating InP substrate into the epitaxial layer. The binding energy of Mn acceptors, determined to be 53±3 meV in bulk-like Ga0.47In0.53As, increases to 80±5 meV for the on-center Mn state in a 58 Å MQW. The strong well-width dependence of the binding energy is explained in terms of the unique behavior of the Mn impurity in III-V semiconductors. The Mn in Ga0.47In0.53As and Ga0.47In0.53As/Al0.48In0.52As MQWs behaves predominantly as a deep impurity.

KW - 73.20.Hb

KW - 78.55.Cr

KW - 78.65.Fa

UR - http://www.scopus.com/inward/record.url?scp=0026255872&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026255872&partnerID=8YFLogxK

U2 - 10.1007/BF00348159

DO - 10.1007/BF00348159

M3 - Article

AN - SCOPUS:0026255872

SN - 0721-7250

VL - 53

SP - 437

EP - 441

JO - Applied Physics A Solids and Surfaces

JF - Applied Physics A Solids and Surfaces

IS - 5

ER -

Manganese-related luminescence in GaInAs/AlInAs multiple quantum wells grown on InP by molecular beam epitaxy

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this