TY - JOUR
T1 - Magnetic Pattern Recognition Using Injection-Locked Spin-Torque Nano-Oscillators
AU - Yogendra, Karthik
AU - Fan, Deliang
AU - Jung, Byunghoo
AU - Roy, Kaushik
N1 - Funding Information:
This work was supported by the National Science Foundation, National Security Science and Engineering Faculty Fellowship, Semiconductor Research Corporation, Center for Spintronic Materials, Interfaces and Novel Architectures, a STARnet Center through the Defense Advanced Research Projects Agency (DARPA) and Microelectronics Advanced Research Corporation (MARCO).
Publisher Copyright:
© 2016 IEEE.
PY - 2016/4
Y1 - 2016/4
N2 - In this paper, we propose an efficient methodology for detecting magnetic field and thereby magnetic patterns using an injection-locked spin-torque nano-oscillator (STNO) array. We demonstrate the methodology with the implementation of a physical STNO model based on the Landau-Lifshitz-Gilbert-Slonczewski equation, which is benchmarked with experimental data. Based on our simulations, we provide an analysis of how the STNO, as a field-controlled oscillator, together with injection locking, can be used to sense magnetic fields and thereby magnetic patterns. The output can be sensed using simple CMOS peripheral circuitry.
AB - In this paper, we propose an efficient methodology for detecting magnetic field and thereby magnetic patterns using an injection-locked spin-torque nano-oscillator (STNO) array. We demonstrate the methodology with the implementation of a physical STNO model based on the Landau-Lifshitz-Gilbert-Slonczewski equation, which is benchmarked with experimental data. Based on our simulations, we provide an analysis of how the STNO, as a field-controlled oscillator, together with injection locking, can be used to sense magnetic fields and thereby magnetic patterns. The output can be sensed using simple CMOS peripheral circuitry.
KW - Injection locking
KW - magnetic pattern recognition
KW - spin-torque nano-oscillators (STNOs)
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U2 - 10.1109/TED.2016.2523423
DO - 10.1109/TED.2016.2523423
M3 - Article
AN - SCOPUS:84976241904
SN - 0018-9383
VL - 63
SP - 1674
EP - 1680
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 4
M1 - 7405294
ER -