< 700 mV Open-Circuit Voltages on Defect-Engineered P-type Silicon Heterojunction Solar Cells on Czochralski and Multicrystalline Wafers

Daniel Chen; Moonyong Kim; Jianwei Shi; Zhengshan Yu; Ashling Mehdi Leilaeioun; Shaoyang Liu; Bruno Stefani; Stuart Wenham; Roland Einhaus; Zachary Holman; Brett Hallam

doi:10.1109/PVSC.2018.8548239

< 700 mV Open-Circuit Voltages on Defect-Engineered P-type Silicon Heterojunction Solar Cells on Czochralski and Multicrystalline Wafers

Daniel Chen, Moonyong Kim, Jianwei Shi, Zhengshan Yu, Ashling Mehdi Leilaeioun, Shaoyang Liu, Bruno Stefani, Stuart Wenham, Roland Einhaus, Zachary Holman, Brett Hallam

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Scopus citations

Abstract

Silicon heterojunction solar cells are primarily fabricated with high-quality wafers, resulting in a higher manufacturing cost than mainstream solar cells. We explore the impact of defect engineering methods of hydrogenation and gettering into silicon heterojunction solar cells fabricated using low-lifetime, commercial-grade, p-type, Czochralski-grown monocrystalline and high-performance multicrystalline wafers. We demonstrate solar cells with independently verified opencircuit voltages of 707 mV and 702 mV on monocrystalline and multicrystalline silicon wafers, respectively, thus exceeding 700 mV on multicrystalline silicon materials for the first time in the world. These remarkably high open-circuit voltages reveal the potential of cost-competitive low-quality p-type silicon wafers for making high-efficiency solar cells with efficiencies without the need of shifting towards expensive, high-quality wafers.

Original language	English (US)
Title of host publication	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1677-1681
Number of pages	5
ISBN (Electronic)	9781538685297
DOIs	https://doi.org/10.1109/PVSC.2018.8548239
State	Published - Nov 26 2018
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: Jun 10 2018 → Jun 15 2018

Publication series

Name	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

Other

Other	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/Territory	United States
City	Waikoloa Village
Period	6/10/18 → 6/15/18

Keywords

gettering
hydrogenation
passivation
silicon heterojunction

ASJC Scopus subject areas

Energy Engineering and Power Technology
Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2018.8548239

Cite this

Chen, D., Kim, M., Shi, J., Yu, Z., Leilaeioun, A. M., Liu, S., Stefani, B., Wenham, S., Einhaus, R., Holman, Z., & Hallam, B. (2018). < 700 mV Open-Circuit Voltages on Defect-Engineered P-type Silicon Heterojunction Solar Cells on Czochralski and Multicrystalline Wafers. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 1677-1681). Article 8548239 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2018.8548239

< 700 mV Open-Circuit Voltages on Defect-Engineered P-type Silicon Heterojunction Solar Cells on Czochralski and Multicrystalline Wafers. / Chen, Daniel; Kim, Moonyong; Shi, Jianwei et al.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1677-1681 8548239 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, D, Kim, M, Shi, J, Yu, Z, Leilaeioun, AM, Liu, S, Stefani, B, Wenham, S, Einhaus, R, Holman, Z & Hallam, B 2018, < 700 mV Open-Circuit Voltages on Defect-Engineered P-type Silicon Heterojunction Solar Cells on Czochralski and Multicrystalline Wafers. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8548239, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, Institute of Electrical and Electronics Engineers Inc., pp. 1677-1681, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 6/10/18. https://doi.org/10.1109/PVSC.2018.8548239

Chen D, Kim M, Shi J, Yu Z, Leilaeioun AM, Liu S et al. < 700 mV Open-Circuit Voltages on Defect-Engineered P-type Silicon Heterojunction Solar Cells on Czochralski and Multicrystalline Wafers. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1677-1681. 8548239. (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). doi: 10.1109/PVSC.2018.8548239

Chen, Daniel ; Kim, Moonyong ; Shi, Jianwei et al. / < 700 mV Open-Circuit Voltages on Defect-Engineered P-type Silicon Heterojunction Solar Cells on Czochralski and Multicrystalline Wafers. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1677-1681 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

@inproceedings{dd54d4d8015a481fa823c73adea5a0ee,

title = "< 700 mV Open-Circuit Voltages on Defect-Engineered P-type Silicon Heterojunction Solar Cells on Czochralski and Multicrystalline Wafers",

abstract = "Silicon heterojunction solar cells are primarily fabricated with high-quality wafers, resulting in a higher manufacturing cost than mainstream solar cells. We explore the impact of defect engineering methods of hydrogenation and gettering into silicon heterojunction solar cells fabricated using low-lifetime, commercial-grade, p-type, Czochralski-grown monocrystalline and high-performance multicrystalline wafers. We demonstrate solar cells with independently verified opencircuit voltages of 707 mV and 702 mV on monocrystalline and multicrystalline silicon wafers, respectively, thus exceeding 700 mV on multicrystalline silicon materials for the first time in the world. These remarkably high open-circuit voltages reveal the potential of cost-competitive low-quality p-type silicon wafers for making high-efficiency solar cells with efficiencies without the need of shifting towards expensive, high-quality wafers.",

keywords = "gettering, hydrogenation, passivation, silicon heterojunction",

author = "Daniel Chen and Moonyong Kim and Jianwei Shi and Zhengshan Yu and Leilaeioun, {Ashling Mehdi} and Shaoyang Liu and Bruno Stefani and Stuart Wenham and Roland Einhaus and Zachary Holman and Brett Hallam",

note = "Funding Information: This work has been supported by the Australian Government through the Australian Center for Advanced Photovoltaics (ACAP) and the Australian Renewable Energy Agency (ARENA) (1-SRI001), as well as by the Engineering Research Center Program of the National Science Foundation and the Department of Energy under NSF Cooperative Agreement No. EEC-1041895. Brett Hallam would like to acknowledge the support of the Australian Research Council (ARC) through a Discovery Early Career Researcher Award (DE170100620). Daniel Chen would like to acknowledge the support and contribution of the Australian Commonwealth Government through the Australian Government Research Training Program Scholarship. The views expressed herein are not necessarily the views of the Australian Government, and the Australian Government does not accept responsibility for any information or advice contained herein.The authors would also like to acknowledge Duc Huy Dao and Ly Mai for assistance in sample fabrication. Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",

year = "2018",

month = nov,

day = "26",

doi = "10.1109/PVSC.2018.8548239",

language = "English (US)",

series = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1677--1681",

booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",

}

TY - GEN

T1 - < 700 mV Open-Circuit Voltages on Defect-Engineered P-type Silicon Heterojunction Solar Cells on Czochralski and Multicrystalline Wafers

AU - Chen, Daniel

AU - Kim, Moonyong

AU - Shi, Jianwei

AU - Yu, Zhengshan

AU - Leilaeioun, Ashling Mehdi

AU - Liu, Shaoyang

AU - Stefani, Bruno

AU - Wenham, Stuart

AU - Einhaus, Roland

AU - Holman, Zachary

AU - Hallam, Brett

N1 - Funding Information: This work has been supported by the Australian Government through the Australian Center for Advanced Photovoltaics (ACAP) and the Australian Renewable Energy Agency (ARENA) (1-SRI001), as well as by the Engineering Research Center Program of the National Science Foundation and the Department of Energy under NSF Cooperative Agreement No. EEC-1041895. Brett Hallam would like to acknowledge the support of the Australian Research Council (ARC) through a Discovery Early Career Researcher Award (DE170100620). Daniel Chen would like to acknowledge the support and contribution of the Australian Commonwealth Government through the Australian Government Research Training Program Scholarship. The views expressed herein are not necessarily the views of the Australian Government, and the Australian Government does not accept responsibility for any information or advice contained herein.The authors would also like to acknowledge Duc Huy Dao and Ly Mai for assistance in sample fabrication. Publisher Copyright: © 2018 IEEE.

PY - 2018/11/26

Y1 - 2018/11/26

N2 - Silicon heterojunction solar cells are primarily fabricated with high-quality wafers, resulting in a higher manufacturing cost than mainstream solar cells. We explore the impact of defect engineering methods of hydrogenation and gettering into silicon heterojunction solar cells fabricated using low-lifetime, commercial-grade, p-type, Czochralski-grown monocrystalline and high-performance multicrystalline wafers. We demonstrate solar cells with independently verified opencircuit voltages of 707 mV and 702 mV on monocrystalline and multicrystalline silicon wafers, respectively, thus exceeding 700 mV on multicrystalline silicon materials for the first time in the world. These remarkably high open-circuit voltages reveal the potential of cost-competitive low-quality p-type silicon wafers for making high-efficiency solar cells with efficiencies without the need of shifting towards expensive, high-quality wafers.

AB - Silicon heterojunction solar cells are primarily fabricated with high-quality wafers, resulting in a higher manufacturing cost than mainstream solar cells. We explore the impact of defect engineering methods of hydrogenation and gettering into silicon heterojunction solar cells fabricated using low-lifetime, commercial-grade, p-type, Czochralski-grown monocrystalline and high-performance multicrystalline wafers. We demonstrate solar cells with independently verified opencircuit voltages of 707 mV and 702 mV on monocrystalline and multicrystalline silicon wafers, respectively, thus exceeding 700 mV on multicrystalline silicon materials for the first time in the world. These remarkably high open-circuit voltages reveal the potential of cost-competitive low-quality p-type silicon wafers for making high-efficiency solar cells with efficiencies without the need of shifting towards expensive, high-quality wafers.

KW - gettering

KW - hydrogenation

KW - passivation

KW - silicon heterojunction

UR - http://www.scopus.com/inward/record.url?scp=85059913401&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85059913401&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2018.8548239

DO - 10.1109/PVSC.2018.8548239

M3 - Conference contribution

AN - SCOPUS:85059913401

T3 - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

SP - 1677

EP - 1681

BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018

Y2 - 10 June 2018 through 15 June 2018

ER -

< 700 mV Open-Circuit Voltages on Defect-Engineered P-type Silicon Heterojunction Solar Cells on Czochralski and Multicrystalline Wafers

Abstract

Publication series

Other

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this