Low-Temperature Processing of Ferroelectric Layer-Structured Perovskite Thin Films by Using an Alkoxide Complex

K. Kato; Y. Torii; C. Zheng; J. M. Finder; R. H. Barz; Sandwip Dey

Low-Temperature Processing of Ferroelectric Layer-Structured Perovskite Thin Films by Using an Alkoxide Complex

K. Kato, Y. Torii, C. Zheng, J. M. Finder, R. H. Barz, Sandwip Dey

Chemical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The alkoxy-derived thin films on Pt-passivated silicon substrates crystallized to single-phase perovskite SBT at temperatures below 550°C. The crystalline perfection improved and the crystallite size increased with temperatures up to 700°C. The adhesion, crystallinity, and microstructure of the Pt bottom electrodes were found to affect the cristallographic orientation of the SBT thin films. The SBT thin film showing higher degrees of (115) or (020)/(200) orientations, exhibited improved ferroelectric and fatigue properties.

Original language	English (US)
Pages (from-to)	189-196
Number of pages	8
Journal	Key Engineering Materials
Volume	157-158
State	Published - 1999

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Low-Temperature Processing of Ferroelectric Layer-Structured Perovskite Thin Films by Using an Alkoxide Complex",

abstract = "The alkoxy-derived thin films on Pt-passivated silicon substrates crystallized to single-phase perovskite SBT at temperatures below 550°C. The crystalline perfection improved and the crystallite size increased with temperatures up to 700°C. The adhesion, crystallinity, and microstructure of the Pt bottom electrodes were found to affect the cristallographic orientation of the SBT thin films. The SBT thin film showing higher degrees of (115) or (020)/(200) orientations, exhibited improved ferroelectric and fatigue properties.",

author = "K. Kato and Y. Torii and C. Zheng and Finder, {J. M.} and Barz, {R. H.} and Sandwip Dey",

year = "1999",

language = "English (US)",

volume = "157-158",

pages = "189--196",

journal = "Key Engineering Materials",

issn = "1013-9826",

publisher = "Trans Tech Publications",

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T1 - Low-Temperature Processing of Ferroelectric Layer-Structured Perovskite Thin Films by Using an Alkoxide Complex

AU - Kato, K.

AU - Torii, Y.

AU - Zheng, C.

AU - Finder, J. M.

AU - Barz, R. H.

AU - Dey, Sandwip

PY - 1999

Y1 - 1999

N2 - The alkoxy-derived thin films on Pt-passivated silicon substrates crystallized to single-phase perovskite SBT at temperatures below 550°C. The crystalline perfection improved and the crystallite size increased with temperatures up to 700°C. The adhesion, crystallinity, and microstructure of the Pt bottom electrodes were found to affect the cristallographic orientation of the SBT thin films. The SBT thin film showing higher degrees of (115) or (020)/(200) orientations, exhibited improved ferroelectric and fatigue properties.

AB - The alkoxy-derived thin films on Pt-passivated silicon substrates crystallized to single-phase perovskite SBT at temperatures below 550°C. The crystalline perfection improved and the crystallite size increased with temperatures up to 700°C. The adhesion, crystallinity, and microstructure of the Pt bottom electrodes were found to affect the cristallographic orientation of the SBT thin films. The SBT thin film showing higher degrees of (115) or (020)/(200) orientations, exhibited improved ferroelectric and fatigue properties.

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UR - http://www.scopus.com/inward/citedby.url?scp=1842841904&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:1842841904

SN - 1013-9826

VL - 157-158

SP - 189

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JO - Key Engineering Materials

JF - Key Engineering Materials

ER -

Low-Temperature Processing of Ferroelectric Layer-Structured Perovskite Thin Films by Using an Alkoxide Complex

Abstract

ASJC Scopus subject areas

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